Resistive Switching Behaviors of HfO$_{2}$ Thin Films by Sol–Gel Spin Coating for Nonvolatile Memory Applications

2012 ◽  
Vol 5 (8) ◽  
pp. 085803 ◽  
Author(s):  
Ananthakumar Ramadoss ◽  
Karthikeyan Krishnamoorthy ◽  
Sang Jae Kim
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Spin Coating ◽  
Nonvolatile Memory ◽  
Sol Gel ◽  
Memory Applications

Pulsed Laser Deposition of SrBi2Ta2O9 Thin Films for Nonvolatile Memory Applications

1995 ◽  
Vol 397 ◽  
Author(s):  
S. Werner ◽  
D. Thomas ◽  
S.K. Streiffer ◽  
O. Auciello ◽  
Angus I. Kingon
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Nonvolatile Memory ◽  
Elevated Temperatures ◽  
Sol Gel ◽  
Pulsed Laser ◽  
Hysteresis Loops ◽  
Laser Deposition ◽  
Polarization Electric Field ◽  
Memory Applications

ABSTRACTFerroelectric SrBi2Ta2U9 (SBT) thin films were synthesized by pulsed laser deposition (PLD) on platinized silicon substrates held at different substrate temperatures, from targets with different compositions. It was necessary to anneal films deposited at low temperature (525°C) at elevated temperatures in an oxygen atmosphere in order to achieve properties comparable to SBT thin films grown by the sol-gel technique. Polarization – electric field hysteresis loops showed saturation in the 2-5 V range with a remnant polarization 2Pr = 8-13 µC/cm2. Capacitors showed negligible fatigue up to 1010 switching cycles.

Resistive switching characteristics of Sm2O3 thin films for nonvolatile memory applications

2011 ◽  
Vol 63 (1) ◽  
pp. 189-191 ◽  
Author(s):  
Sheng-Yao Huang ◽  
Ting-Chang Chang ◽  
Min-Chen Chen ◽  
Shih-Ching Chen ◽  
Hung-Ping Lo ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Switching Characteristics ◽  
Memory Applications

Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications

2008 ◽  
Vol 92 (2) ◽  
pp. 022110 ◽  
Author(s):  
Wen-Yuan Chang ◽  
Yen-Chao Lai ◽  
Tai-Bor Wu ◽  
Sea-Fue Wang ◽  
Frederick Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Zno Thin Films ◽  
Switching Characteristics ◽  
Memory Applications ◽  
Unipolar Resistive Switching

Reversible resistive switching of SrTiOx thin films for nonvolatile memory applications

2006 ◽  
Vol 88 (8) ◽  
pp. 082904 ◽  
Author(s):  
Dooho Choi ◽  
Dongsoo Lee ◽  
Hyunjun Sim ◽  
Man Chang ◽  
Hyunsang Hwang
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Memory Applications

scholarly journals Effect of Mn doping on electroforming and threshold voltages of bipolar resistive switching in Al/Mn : NiO/ITO

RSC Advances ◽  
2018 ◽  
Vol 8 (52) ◽  
pp. 29499-29504 ◽  
Author(s):  
Ni-Na Ge ◽  
Chuan-Hui Gong ◽  
Xin-Cai Yuan ◽  
Hui-Zhong Zeng ◽  
Xian-Hua Wei
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Spin Coating ◽  
Sol Gel ◽  
Bipolar Resistive Switching ◽  
Mn Doping ◽  
Threshold Voltages ◽  
Mn Doped

We investigated the bipolar resistive switching (BRS) properties of Mn-doped NiO thin films by sol–gel spin-coating.

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