Pulsed Laser Deposition of SrBi2Ta2O9 Thin Films for Nonvolatile Memory Applications

1995 ◽  
Vol 397 ◽  
Author(s):  
S. Werner ◽  
D. Thomas ◽  
S.K. Streiffer ◽  
O. Auciello ◽  
Angus I. Kingon
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Nonvolatile Memory ◽  
Elevated Temperatures ◽  
Sol Gel ◽  
Pulsed Laser ◽  
Hysteresis Loops ◽  
Laser Deposition ◽  
Polarization Electric Field ◽  
Memory Applications

ABSTRACTFerroelectric SrBi2Ta2U9 (SBT) thin films were synthesized by pulsed laser deposition (PLD) on platinized silicon substrates held at different substrate temperatures, from targets with different compositions. It was necessary to anneal films deposited at low temperature (525°C) at elevated temperatures in an oxygen atmosphere in order to achieve properties comparable to SBT thin films grown by the sol-gel technique. Polarization – electric field hysteresis loops showed saturation in the 2-5 V range with a remnant polarization 2Pr = 8-13 µC/cm2. Capacitors showed negligible fatigue up to 1010 switching cycles.

Characteristics of SrBi2Ta2O9 thin films prepared by pulsed laser deposition for non-volatile memory applications

2000 ◽  
Vol 375 (1-2) ◽  
pp. 200-204 ◽  
Author(s):  
Xinhua Zhu ◽  
Yiming Liu ◽  
Zhenghua An ◽  
Tao Zhu ◽  
Zhuangchun Wu ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications

c-axis oriented ferroelectric thin films of Si-substituted PbTiO3 on Si(100) by pulsed laser deposition: Boost for nonvolatile memory application

1998 ◽  
Vol 72 (10) ◽  
pp. 1179-1181 ◽  
Author(s):  
S. C. Purandare ◽  
V. R. Palkar ◽  
J. John ◽  
M. S. Multani ◽  
R. Pinto
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Nonvolatile Memory ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition

Low Temperature Preparation of Sr2(Ta1-x, Nbx)2O7 Ferroelectric Thin Film by Pulsed Laser Deposition

1999 ◽  
Vol 596 ◽  
Author(s):  
Minoru Noda ◽  
Toshiyuki Nakaiso ◽  
Hideki Sugiyama ◽  
Masanori Okuyama
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Pulsed Laser Deposition ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Pulsed Laser ◽  
Target Material ◽  
Laser Deposition ◽  
Cross Sectional ◽  
Low Temperature Preparation

AbstractPreferentially (151)-oriented Sr2(Ta1-x, Nbx)2O7 (STN) thin films on Pt have been prepared at temperatures as low as 550 and 600°C, in O2 and N2O atmospheres, respectively, by pulsed laser deposition (PLD). The temperatures are significantly lower than those prepared by sol-gel methods, where 950°C was reported. These are the lowest growth temperatures of crystalline STN thin films. Composition ratio (x) in the target material was determined to be around 0.3 from measurement of the Curie temperature and ferroelectric properties. Active oxygen generated by laser irradiation in ambient O2 or N2O atmosphere is found to be very effective for chemical reaction, and decreases the growth temperature of crystalline STN films. It is also confirmed by surface AFM and cross-sectional SEM observations that the film has a columnar-shaped structure with grain size ranging from 50 to 100 nm. Remanent polarization (Pr) and coercive field (Ec) are 0.4μ C/cm2 and 30 kV/cm, respectively. Finally, we expect the low temperature STN film prepared by PLD to be a promising ferroelectric for the application in ferroelectric memory FETs.

Preparation and Characterization of Lead Zirconate Titanate Thin Films Derived by Hybrid Processing: Sol-Gel Method and Pulsed Laser Deposition

2003 ◽  
Vol 42 (Part 1, No. 9B) ◽  
pp. 5936-5940 ◽  
Author(s):  
Zhan Jie Wang ◽  
Li Jun Yan ◽  
Yuki Aoki ◽  
Hiroyuki Kokawa ◽  
Ryutaro Maeda
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Pulsed Laser ◽  
Lead Zirconate ◽  
Laser Deposition ◽  
Gel Method ◽  
Sol Gel Method

scholarly journals Sol-Gel Derived La0.7Sr0.3MnO3 Thin Films by Pulsed Laser Deposition

2016 ◽  
Vol 6 (5) ◽  
Author(s):  
A. A. El-Aziem ◽  
Y. Badr ◽  
K. M. El-Khatib ◽  
M. A. Hafez
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Sol Gel ◽  
Pulsed Laser ◽  
Laser Deposition

Characterization of Epitaxial Bi-Layer-Structured Bi5Ti3FeO15 (m = 4) and Bi4Ti3O12-Bi5Ti3FeO15 (m = 3-4) Natural-Superlattice-Structured Multiferroic Thin Films Prepared by Pulsed Laser deposition

2007 ◽  
Vol 1034 ◽  
Author(s):  
Seiji Nakashima ◽  
Yoshitaka Nakamura ◽  
Masanori Okuyama
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Single Crystals ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Hysteresis Loops ◽  
Laser Deposition ◽  
Natural Superlattice ◽  
La Doped

AbstractBi-layer-structured mutiferroic Bi5Ti3FeO15 (BTFO15) (m = 4) and natural-superlattice-structured Bi4Ti3O12- Bi5Ti3FeO15 (BIT-BTFO15) (m = 3-4) thin films have been prepared on (001) and (110) oriented SrTiO3 (STO) single crystal substrates by using pulsed laser deposition. X-ray diffraction patterns of these thin films on (00l) STO single crystals shows the obtained thin films were (00l)-oriented layer-perovskite single phase, and BIT-BTFO15 (m = 3-4) natural-superlattice-structure has also obtained. On (110) STO single crystal, layer perovskite (11l) oriented thin films have been also obtained. For characterizing ferroelectric properties, these thin films have been prepared on (001) and (110) oriented La-doped (3.73 wt%) STO single crystal substrates. From ferroelectric D-E hysteresis loops measurements, BTFO15 (m = 4) and BIT-BTFO (m = 3-4) thin films on (110) La-doped STO single crystals shows good ferroelectric hysteresis loops and their double remanent polarizations (2Pr) were 47 μC/cm2 and 44 μC/cm2, respectively. However, these thin films on (001) La-doped STO single crystals do not show ferroelectric characteristics.

Study on the properties of Pb(Zr,Ti)O3 thin films grown alternately by pulsed laser deposition and sol-gel method

2020 ◽  
Vol 384 (11) ◽  
pp. 126232
Author(s):  
Peng Shi ◽  
Yan Yang ◽  
Huisen Li ◽  
Zhiqiu Zou ◽  
Benpeng Zhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Sol Gel ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Gel Method ◽  
Sol Gel Method

Mechanical and Tribological Properties of Zrc/Vc Alloy Films Deposited by Sputtering and Pulsed Laser Deposition

1997 ◽  
Vol 505 ◽  
Author(s):  
W. F. Brock ◽  
J. E. Krzanowski ◽  
R. E. Leuchtner ◽  
L. J. Legore ◽  
D. J. Frankel
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Elevated Temperatures ◽  
Heavy Atom ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Crystallographic Structure ◽  
Processing Parameter ◽  
Wear Properties ◽  
Background Gas

ABSTRACTA study has been conducted on ZrC/VC alloy thin films prepared by both pulsed laser deposition (PLD) and RF magnetron sputtering. The phase formation, wear properties, and hardness of these thin films were examined. An alloy target comprised of 36% VC and 64% ZrC (atomic %) was used to deposit films at 200°, 2000°, and 400° C. The nominal film thickness was 0.6 μm. X-ray diffraction (XRD) analysis revealed these films were solid-solution alloys and showed a preference for (100) orientation for sputter-deposited films and a (110) orientation for laser deposition. More highly oriented films were obtained at elevated temperatures as evidenced by rocking curve measurements on the PLD films. The FWHM of the peaks ranged from 2.2° to 8.3° for films deposited at 400° C and 20° C, respectively.Using time-of-flight quadmpole mass spectrometry (TOFQMS), we performed plume diagnostics to measure particle energies and the thermalization effects of the background gas. In vacuum, typical ion energies ranged from ˜5–100 eV while the neutral atoms had kinetic energies from ˜1–5 eV. Our measurements show that the background gas can be used to selectively thermalize low mass components in the plume. From measured kinetic energies and collision effects of the gas, the changes in crystallographic structure of the alloy with pressure appear to result from collision-induced effects from condensation of the Zr atoms. This ‘heavy’ atom effect may be an important new processing parameter with which to adjust film morphology and crystal texture.

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