Nuclear magnetic resonance studies on hydrogenated amorphous silicon prepared by very high-frequency glow discharge

1994 ◽  
Vol 69 (2) ◽  
pp. 169-176 ◽  
Author(s):  
K. Peter ◽  
P. C. Taylor ◽  
F. Finger
Keyword(s):  
Nuclear Magnetic Resonance ◽  
Magnetic Resonance ◽  
Glow Discharge ◽  
Amorphous Silicon ◽  
High Frequency ◽  
Hydrogenated Amorphous Silicon ◽  
Very High Frequency ◽  
Magnetic Resonance Studies ◽  
Hydrogenated Amorphous ◽  
Very High

Nuclear Magnetic Resonance Studies of Hydrogen in Amorphous Silicon

1996 ◽  
Vol 420 ◽  
Author(s):  
R. E. Norberg ◽  
P. A. Fedders ◽  
D. J. Leopold
Keyword(s):  
Nuclear Magnetic Resonance ◽  
Magnetic Resonance ◽  
Amorphous Silicon ◽  
Molecular Hydrogen ◽  
Hydrogenated Amorphous Silicon ◽  
High Quality ◽  
Magnetic Resonance Studies ◽  
Structural Configurations ◽  
Species Specific ◽  
Hydrogenated Amorphous

AbstractProton and deuteron NMR in hydrogenated amorphous silicon yield quantitative measures of species-specific structural configurations and their dynamics. Populations of silicon-bonded and molecular hydrogens correlate with photovoltaic quality, doping, illumination/dark anneal sequences, and with infrared and other characterizations. High quality films contain substantial populations of nanovoid-trapped molecular hydrogen.

High Rate Deposition of Amorphous Silicon Based Solar Cells using Modified Very High Frequency Glow Discharge

2007 ◽  
Vol 989 ◽  
Author(s):  
Guozhen Yue ◽  
Baojie Yan ◽  
Jeffrey Yang ◽  
Subhendu Guha
Keyword(s):  
Solar Cells ◽  
Glow Discharge ◽  
Amorphous Silicon ◽  
High Frequency ◽  
Cell Performance ◽  
High Rate ◽  
Active Area ◽  
Very High Frequency ◽  
Single Junction ◽  
Very High

AbstractWe report our recent progress on high rate deposition of hydrogenated amorphous silicon (a-Si:H) and silicon germanium (a-SiGe:H) based n-i-p solar cells. The intrinsic a-Si:H and a-SiGe:H layers were deposited using modified very high frequency (MVHF) glow discharge. We found that both the initial cell performance and stability of the MVHF a-Si:H single-junction cells are independent of the deposition rate up to 15 Å/s. The average initial and stable active-area cell efficiencies of 10.0% and 8.5%, respectively, were obtained for the cells on textured Ag/ZnO coated stainless steel substrates. a-SiGe:H single-junction cells were also optimized at a rate of ~10 Å/s. The cell performance is similar to those made using conventional radio frequency technique at 3 Å/s. By combining the optimized component cells made at 10 Å/s, an a-Si:H/a-SiGe:H double-junction solar cell with an initial active-area efficiency of 11.7% was achieved.

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