High Pressure Oxygen Treatment and the Substitution of Sr for Ba on (Nd1/3Ba2/3)2(Ce1/3Nd2/3)2Cu3OySuperconductor

1989 ◽  
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Kazuharu Shimizu ◽  
Yukishige Kitano ◽  
Masataka Tanaka ◽  
Tomoji Kawai
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Po-Chun Yang ◽  
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1994 ◽  
Vol 93 (1) ◽  
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1992 ◽  
Vol 197 (1-2) ◽  
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A.P.B. Sinha ◽  
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J.C. Ho

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Vol 376-377 ◽  
pp. 752-755 ◽  
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B.I. Kim ◽  
S.C. Kim ◽  
B.C. Shin ◽  
T.S. Kim ◽  
M.Y. Jung ◽  
...  

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Jiajun Hoo ◽  
V. Devi ◽  
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David Robichaud ◽  
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2001 ◽  
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Yu. Kolobyanin ◽  
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2010 ◽  
Vol 447-448 ◽  
pp. 61-65 ◽  
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Toshiro K. Doi ◽  
Syuhei Kurokawa ◽  
Yoji Umezaki ◽  
Yoji Matsukawa ◽  
...  

We designed and manufactured a prototype of a unique CMP machine, which can perform double-side CMP simultaneously in a sealed and pressure container as regarding effective action of the processing atmosphere around workpieces as important. Polishing experiments with single crystal silicon (Si) wafers (100) are performed by charging the container with various gases. As a result, the removal rates increased by up to 25% under high pressure oxygen gas atmosphere.


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