Basic Characteristics of a Simultaneous Double-Side CMP Machine, Housed in a Sealed, Pressure-Resistant Container

2010 ◽  
Vol 447-448 ◽  
pp. 61-65 ◽  
Author(s):  
Kei Kitamura ◽  
Toshiro K. Doi ◽  
Syuhei Kurokawa ◽  
Yoji Umezaki ◽  
Yoji Matsukawa ◽  
...  
Keyword(s):  
High Pressure ◽  
Single Crystal ◽  
Effective Action ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Pressure Oxygen ◽  
Gas Atmosphere ◽  
High Pressure Oxygen ◽  
Oxygen Gas ◽  
Basic Characteristics

We designed and manufactured a prototype of a unique CMP machine, which can perform double-side CMP simultaneously in a sealed and pressure container as regarding effective action of the processing atmosphere around workpieces as important. Polishing experiments with single crystal silicon (Si) wafers (100) are performed by charging the container with various gases. As a result, the removal rates increased by up to 25% under high pressure oxygen gas atmosphere.

Observation of new superconducting phases in La2CuO4+δ annealed in high pressure oxygen gas

1991 ◽  
Vol 185-189 ◽  
pp. 917-918 ◽  
Author(s):  
Y. Oda ◽  
A. Sumiyama ◽  
T. Kohara ◽  
M. Yamada ◽  
K. Asayama ◽  
...  
Keyword(s):  
High Pressure ◽  
Superconducting Phases ◽  
Pressure Oxygen ◽  
High Pressure Oxygen ◽  
Oxygen Gas

Structural Comparisons of SiOx and Si/SiOx Formed by Passivation of Single-Crystal Silicon by Atomic and Molecular Oxygen

2003 ◽  
Vol 786 ◽  
Author(s):  
Maja Kisa ◽  
Ray D. Twesten ◽  
Judith C. Yang
Keyword(s):  
Single Crystal ◽  
Molecular Oxygen ◽  
Atomic Oxygen ◽  
Random Distribution ◽  
Structural Characteristics ◽  
Single Crystal Silicon ◽  
Silica Layer ◽  
Crystal Silicon ◽  
Selected Area Electron Diffraction ◽  
Oxygen Gas

ABSTRACTThe structural characteristics of a silica layer and Si/SiO2 interface formed on Si single-crystal by oxidation in hyperthermal atomic oxygen (AO) and molecular oxygen (MO) at 493K were compared by wide variety of experimental techniques. The hyperthermal AO with kinetic energy of 5.1eV was created by the pulsed laser detonation of oxygen gas. The oxide formed by AO and MO on Si single crystal is amorphous as observed by HRTEM and selected area electron diffraction (SAED). However, the oxide formed by AO has a less random distribution of silicon and oxygen atoms as compared to the oxide formed by MO, as evidenced by the SAED patterns and EELS spectra. In contrast to MO formed silica, initial EELS results across the Si/SiO2 interface revealed no region of suboxides exists near the interface in the AO formed silica. The Si/SiO2 interface formed by AO species was found to be very abrupt and the oxide homogeneous, as opposed to the broad interface and non-homogeneous oxide created by MO, as determined by HRTEM and EELS.

Study of (La1-xMx)2CuO4+δ annealed in high pressure oxygen gas

1990 ◽  
Vol 165-166 ◽  
pp. 1663-1664 ◽  
Author(s):  
Yasukage Oda ◽  
Masaru Yamada ◽  
Kunisuke Asayama ◽  
Takao Kohara ◽  
Yoshihiro Yamada
Keyword(s):  
High Pressure ◽  
Pressure Oxygen ◽  
High Pressure Oxygen ◽  
Oxygen Gas

Ductile Regime Nanomachining of Single-Crystal Silicon Carbide

2004 ◽  
Vol 127 (3) ◽  
pp. 522-532 ◽  
Author(s):  
John Patten ◽  
Wei Gao ◽  
Kudo Yasuto
Keyword(s):  
Silicon Carbide ◽  
High Pressure ◽  
Single Crystal ◽  
Single Point ◽  
Single Crystal Silicon ◽  
Diamond Turning ◽  
High Pressure Phase ◽  
Ductile Material ◽  
Crystal Silicon ◽  
Pressure Phase

We have demonstrated the ability to perform a ductile material removal operation, via single-point diamond turning, on single-crystal silicon carbide (6H). To our knowledge, this is the first reported work on the ductile machining of single-crystal silicon carbide (SiC). SiC experiences a ductile-to-brittle transition similar to other nominally brittle materials such as silicon, germanium, and silicon nitride. It is believed that the ductility of SiC during machining is due to the formation of a high-pressure phase at the cutting edge, which encompasses the chip formation zone and its associated material volume. This high-pressure phase transformation mechanism is similar to that found with other semiconductors and ceramics, leading to a plastic response rather than brittle fracture at small size scales.

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