Chemical Vapor Deposition of Low Hydrogen Content Silicon Nitride Films Using Microwave-Excited Hydrogen Radicals

1990 ◽  
Vol 29 (Part 1, No. 5) ◽  
pp. 918-922 ◽  
Author(s):  
Kanji Yasui ◽  
Masaaki Nasu ◽  
Kazuki Komaki ◽  
Shigeo Kaneda
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Hydrogen Content ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Nitride Films ◽  
Hydrogen Radicals

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

scholarly journals Optical properties of silicon nitride films deposited by hot filament chemical vapor deposition

1995 ◽  
Vol 77 (12) ◽  
pp. 6534-6541 ◽  
Author(s):  
Sadanand V. Deshpande ◽  
Erdogan Gulari ◽  
Steven W. Brown ◽  
Stephen C. Rand
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Nitride Films ◽  
Hot Filament

Preparation of Plasma Chemical Vapor Deposition Silicon Nitride Films from SiH2F2and NH3Source Gases

1991 ◽  
Vol 30 (Part 2, No. 4A) ◽  
pp. L619-L621 ◽  
Author(s):  
Nobuaki Watanabe ◽  
Mamoru Yoshida ◽  
Yi-Chao Jiang ◽  
Tutomu Nomoto ◽  
Ichimatsu Abiko
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Silicon Nitride Films

Low Temperature Silicon Nitride Films Deposited on 3D Topography by Hot Wire Chemical Vapor Deposition (HWCVD)

2007 ◽  
Vol 1036 ◽  
Author(s):  
Stephan Warnat ◽  
Markus Hoefer ◽  
Lothar Schaefer ◽  
Helmut Foell ◽  
Peter Lange
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Electrical Breakdown ◽  
Morphological Structure ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Silicon Nitride Films ◽  
Deposition Processes ◽  
Silicon Vias

AbstractSilicon nitride films were deposited by hot-wire chemical vapor deposition processes (HW-CVD). The films reveal a morphological structure very similar to nitrides formed in low pressure CVD (LP-CVD) or plasma enhanced CVD (PE-CVD) processes. The electrical breakdown voltages, however, are much smaller for HW- than PE- or LPCVD films. The deposition in holes for isolation purpose in “through silicon vias” (TSV) technologies in combination with optical devices, which require very low temperatures (<200 °C), have been investigated. They reveal sufficiently good properties for the planned applications.

In Vivo Biostability of CVD Silicon Oxide and Silicon Nitride Films

2005 ◽  
Vol 872 ◽  
Author(s):  
John M. Maloney ◽  
Sara A. Lipka ◽  
Samuel P. Baldwin
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Silicon Oxide ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Silicon Chips ◽  
Silicon Nitride Films

AbstractLow pressure chemical vapor deposition (LPCVD) and plasma enhanced chemical vapor deposition (PECVD) silicon oxide and silicon nitride films were implanted subcutaneously in a rat model to study in vivo behavior of the films. Silicon chips coated with the films of interest were implanted for up to one year, and film thickness was evaluated by spectrophotometry and sectioning. Dissolution rates were estimated to be 0.33 nm/day for LPCVD silicon nitride, 2.0 nm/day for PECVD silicon nitride, and 3.5 nm/day for PECVD silicon oxide. A similar PECVD silicon oxide dissolution rate was observed on a silicon oxide / silicon nitride / silicon oxide stack that was sectioned by focused ion beam etching. These results provide a biostability reference for designing implantable microfabricated devices that feature exposed ceramic films.

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