Low-Temperature Si Surface Cleaning by Hydrogen Beam with Electron-Cyclotron-Resonance Plasma Excitation

Japanese Journal of Applied Physics ◽

10.1143/jjap.29.l1181 ◽

1990 ◽

Vol 29 (Part 2, No. 7) ◽

pp. L1181-L1184 ◽

Author(s):

Tomohiro Shibata ◽

Yasushi Nanishi ◽

Masatomo Fujimoto

Keyword(s):

Low Temperature ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Surface Cleaning ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Plasma Excitation ◽

Hydrogen Beam ◽

Resonance Plasma

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Low-temperature deposition of high-quality silicon dioxide films by sputtering-type electron cyclotron resonance plasma

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.580664 ◽

1997 ◽

Vol 15 (4) ◽

pp. 1951-1954 ◽

Author(s):

H. Nakashima ◽

K. Furukawa ◽

Y. C. Liu ◽

D. W. Gao ◽

Y. Kashiwazaki ◽

...

Keyword(s):

Low Temperature ◽

Silicon Dioxide ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

High Quality ◽

Electron Cyclotron Resonance Plasma ◽

Low Temperature Deposition ◽

Temperature Deposition ◽

Resonance Plasma

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Existence of threshold density in silicon surface cleaning using hydrogen electron cyclotron resonance plasma

Applied Physics Letters ◽

10.1063/1.104800 ◽

1991 ◽

Vol 58 (23) ◽

pp. 2663-2665 ◽

Author(s):

Kenji Nakashima ◽

Masahiko Ishii ◽

Ichiro Tajima ◽

Minoru Yamamoto

Keyword(s):

Cyclotron Resonance ◽

Silicon Surface ◽

Electron Cyclotron Resonance ◽

Surface Cleaning ◽

Electron Cyclotron ◽

Threshold Density ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Low‐temperature homoepitaxial growth of Si by electron cyclotron resonance plasma enhanced chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.114962 ◽

1995 ◽

Vol 67 (7) ◽

pp. 971-973 ◽

Author(s):

J. L. Rogers ◽

P. S. Andry ◽

W. J. Varhue ◽

P. McGaughnea ◽

E. Adams ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Homoepitaxial Growth ◽

Resonance Plasma

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Deposition of low temperature Si-based insulators by the electron cyclotron resonance plasma method

Thin Solid Films ◽

10.1016/s0040-6090(97)00510-5 ◽

1998 ◽

Vol 317 (1-2) ◽

pp. 116-119 ◽

Author(s):

S Garcia ◽

J.M Martin ◽

I Martil ◽

M Fernandez ◽

G Gonzalez-Diaz

Keyword(s):

Low Temperature ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Plasma Method ◽

Resonance Plasma

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Possibility of Metal Surface Cleaning by Electron Cyclotron Resonance Plasma of Hydrogen

Japanese Journal of Applied Physics ◽

10.1143/jjap.18.385 ◽

1979 ◽

Vol 18 (2) ◽

pp. 385-386

Author(s):

Yuichi Sakamoto ◽

Yukio Ishibe

Keyword(s):

Metal Surface ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Surface Cleaning ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Low temperature epitaxial growth of Ge using electron‐cyclotron‐resonance plasma‐assisted chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.351189 ◽

1992 ◽

Vol 71 (4) ◽

pp. 1949-1954 ◽

Author(s):

W. J. Varhue ◽

J. M. Carulli ◽

G. G. Peterson ◽

J. A. Miller

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Epitaxial Growth ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Effect of preoxidation on deposition of thin gate-quality silicon oxide film at low temperature by using a sputter-type electron cyclotron resonance plasma

Journal of Applied Physics ◽

10.1063/1.366431 ◽

1997 ◽

Vol 82 (11) ◽

pp. 5680-5685 ◽

Author(s):

D. W. Gao ◽

Y. Kashiwazaki ◽

K. Muraoka ◽

H. Nakashima ◽

K. Furukawa ◽

...

Keyword(s):

Low Temperature ◽

Cyclotron Resonance ◽

Silicon Oxide ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Silicon Oxide Film ◽

Resonance Plasma

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Silicon growth on germanium substrates by electron cyclotron resonance plasma excitation

Journal of Crystal Growth ◽

10.1016/0022-0248(90)90264-l ◽

1990 ◽

Vol 100 (3) ◽

pp. 643-645

Author(s):

K. Tamamura ◽

K. Akimoto ◽

Y. Mori

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Silicon Growth ◽

Plasma Excitation ◽

Resonance Plasma ◽

Germanium Substrates

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Growth of Epitaxial Silicon Film at Low Temperature by Using Sputtering-Type Electron Cyclotron Resonance Plasma

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.l220 ◽

1999 ◽

Vol 38 (Part 2, No. 3A) ◽

pp. L220-L222 ◽

Author(s):

Junsi Gao ◽

Hiroshi Nakashima ◽

Naofumi Sakai ◽

Dawei Gao ◽

Junli Wang ◽

...

Keyword(s):

Low Temperature ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Silicon Film ◽

Electron Cyclotron ◽

Epitaxial Silicon ◽

Electron Cyclotron Resonance Plasma ◽

Epitaxial Silicon Film ◽

Resonance Plasma

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Low temperature electron cyclotron resonance plasma etching of GaAs, AlGaAs, and GaSb in Cl2/Ar

Applied Physics Letters ◽

10.1063/1.111827 ◽

1994 ◽

Vol 64 (13) ◽

pp. 1673-1675 ◽

Author(s):

S. J. Pearton ◽

F. Ren ◽

C. R. Abernathy

Keyword(s):

Low Temperature ◽

Plasma Etching ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Temperature Electron ◽

Resonance Plasma

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