Effect of preoxidation on deposition of thin gate-quality silicon oxide film at low temperature by using a sputter-type electron cyclotron resonance plasma

Electron Cyclotron ◽

Silicon Oxide Film ◽

Low-temperature deposition of high-quality silicon dioxide films by sputtering-type electron cyclotron resonance plasma

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.580664 ◽

1997 ◽

Vol 15 (4) ◽

pp. 1951-1954 ◽

Cited By ~ 20

Author(s):

H. Nakashima ◽

K. Furukawa ◽

Y. C. Liu ◽

D. W. Gao ◽

Y. Kashiwazaki ◽

...

Keyword(s):

Low Temperature ◽

Silicon Dioxide ◽

Cyclotron Resonance ◽

Electron Cyclotron ◽

High Quality ◽

Low Temperature Deposition ◽

Temperature Deposition ◽

Low‐temperature homoepitaxial growth of Si by electron cyclotron resonance plasma enhanced chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.114962 ◽

1995 ◽

Vol 67 (7) ◽

pp. 971-973 ◽

Cited By ~ 21

Author(s):

J. L. Rogers ◽

P. S. Andry ◽

W. J. Varhue ◽

P. McGaughnea ◽

E. Adams ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Homoepitaxial Growth ◽

Deposition of low temperature Si-based insulators by the electron cyclotron resonance plasma method

Thin Solid Films ◽

10.1016/s0040-6090(97)00510-5 ◽

1998 ◽

Vol 317 (1-2) ◽

pp. 116-119 ◽

Cited By ~ 6

Author(s):

S Garcia ◽

J.M Martin ◽

I Martil ◽

M Fernandez ◽

G Gonzalez-Diaz

Keyword(s):

Low Temperature ◽

Cyclotron Resonance ◽

Electron Cyclotron ◽

Plasma Method ◽

Low-Temperature Si Surface Cleaning by Hydrogen Beam with Electron-Cyclotron-Resonance Plasma Excitation

Japanese Journal of Applied Physics ◽

10.1143/jjap.29.l1181 ◽

1990 ◽

Vol 29 (Part 2, No. 7) ◽

pp. L1181-L1184 ◽

Cited By ~ 21

Author(s):

Tomohiro Shibata ◽

Yasushi Nanishi ◽

Masatomo Fujimoto

Keyword(s):

Low Temperature ◽

Cyclotron Resonance ◽

Surface Cleaning ◽

Electron Cyclotron ◽

Plasma Excitation ◽

Hydrogen Beam ◽

Low temperature epitaxial growth of Ge using electron‐cyclotron‐resonance plasma‐assisted chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.351189 ◽

1992 ◽

Vol 71 (4) ◽

pp. 1949-1954 ◽

Cited By ~ 3

Author(s):

W. J. Varhue ◽

J. M. Carulli ◽

G. G. Peterson ◽

J. A. Miller

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Epitaxial Growth ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

Deposition of sacrificial silicon oxide layers by electron cyclotron resonance plasma

10.1116/1.2746331 ◽

2007 ◽

Vol 25 (4) ◽

pp. 1166 ◽

Cited By ~ 4

Author(s):

C. Biasotto ◽

A. M. Daltrini ◽

R. C. Teixeira ◽

F. A. Boscoli ◽

J. A. Diniz ◽

...

Keyword(s):

Cyclotron Resonance ◽

Silicon Oxide ◽

Electron Cyclotron ◽

Oxide Layers ◽

Growth of Epitaxial Silicon Film at Low Temperature by Using Sputtering-Type Electron Cyclotron Resonance Plasma

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.l220 ◽

1999 ◽

Vol 38 (Part 2, No. 3A) ◽

pp. L220-L222 ◽

Cited By ~ 5

Author(s):

Junsi Gao ◽

Hiroshi Nakashima ◽

Naofumi Sakai ◽

Dawei Gao ◽

Junli Wang ◽

...

Keyword(s):

Low Temperature ◽

Cyclotron Resonance ◽

Silicon Film ◽

Electron Cyclotron ◽

Epitaxial Silicon ◽

Epitaxial Silicon Film ◽

Oxide film deposition by radio frequency sputtering with electron cyclotron resonance plasma stimulation

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.579484 ◽

1995 ◽

Vol 13 (5) ◽

pp. 2427-2434 ◽

Cited By ~ 9

Author(s):

Morito Matsuoka ◽

Shun‐ichi Tohno

Keyword(s):

Oxide Film ◽

Radio Frequency ◽

Cyclotron Resonance ◽

Electron Cyclotron ◽

Film Deposition ◽

Radio Frequency Sputtering ◽

Low temperature electron cyclotron resonance plasma etching of GaAs, AlGaAs, and GaSb in Cl2/Ar

Applied Physics Letters ◽

10.1063/1.111827 ◽

1994 ◽

Vol 64 (13) ◽

pp. 1673-1675 ◽

Cited By ~ 10

Author(s):

S. J. Pearton ◽

F. Ren ◽

C. R. Abernathy

Keyword(s):

Low Temperature ◽

Plasma Etching ◽

Cyclotron Resonance ◽

Electron Cyclotron ◽

Temperature Electron ◽

Electrical properties of low-temperature epitaxial doped Si thin films fabricated by using a sputtering-type electron cyclotron resonance plasma

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/34/7/301 ◽

2001 ◽

Vol 34 (7) ◽

pp. 1025-1031

Author(s):

Junli Wang ◽

Hiroshi Nakashima ◽

Junsi Gao ◽

Katsunori Muraoka

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Low Temperature ◽

Cyclotron Resonance ◽

Electron Cyclotron ◽