Fine Epitaxial Growth of Monolayer-Stepped GaInAs/InP Quantum Wells by Metalorganic Molecular Beam Epitaxy

1991 ◽  
Vol 30 (Part 1, No. 1) ◽  
pp. 27-28 ◽  
Author(s):  
Hideo Kawanishi ◽  
Hirokazu Ikeda
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Metalorganic Molecular Beam Epitaxy

Low‐temperature GaAs epitaxial growth using electron‐cyclotron resonance/metalorganic‐molecular‐beam epitaxy

1988 ◽  
Vol 64 (5) ◽  
pp. 2778-2780 ◽  
Author(s):  
Yoshimitsu Tanaka ◽  
Yasuhiro Kunitsugu ◽  
Ikuo Suemune ◽  
Yoshiaki Honda ◽  
Yasuo Kan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Cyclotron Resonance ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Low Temperature Gaas

scholarly journals Growth and characterization of InP-based 1750 nm emitting membrane external-cavity surface-emitting laser

2020 ◽  
Vol 126 (12) ◽  
Author(s):  
Artur Broda ◽  
Bartosz Jeżewski ◽  
Iwona Sankowska ◽  
Michał Szymański ◽  
Paweł Hoser ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Epitaxial Growth ◽  
Spectral Range ◽  
Molecular Beam ◽  
External Cavity ◽  
Cavity Surface ◽  
Emission Properties ◽  
Surface Emitting Laser

AbstractThe epitaxial growth and emission properties of a membrane external-cavity surface-emitting laser (MECSEL) are demonstrated in the 1750 nm band. A heterostructure consisting of InGaAs quantum wells enclosed by InGaAlAs barriers was deposited on InP by molecular beam epitaxy. The emitted power exceeded 1.5 W, which is the highest that has been reported in this spectral range to date.

Optical Properties of ZnSe/ZnMgSSe Single Quantum Wells Grown by Metalorganic Molecular Beam Epitaxy

1994 ◽  
Vol 33 (Part 2, No. 7B) ◽  
pp. L986-L989 ◽  
Author(s):  
Jun Suda ◽  
Yoichi Kawakami ◽  
Shizuo Fujita
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Single Quantum ◽  
Metalorganic Molecular Beam Epitaxy

Photo‐metalorganic molecular‐beam epitaxy: A new epitaxial growth technique

1989 ◽  
Vol 7 (3) ◽  
pp. 706-710 ◽  
Author(s):  
Eisuke Tokumitsu ◽  
Takumi Yamada ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Growth Technique ◽  
Metalorganic Molecular Beam Epitaxy

Epitaxial growth of nonpolar m-plane ZnO epilayers and ZnO/Zn0.55Mg0.45O multiple quantum wells on a LiGaO2 (100) substrate

RSC Advances ◽  
2015 ◽  
Vol 5 (127) ◽  
pp. 104798-104805 ◽  
Author(s):  
T. Yan ◽  
C.-Y. J. Lu ◽  
L. Chang ◽  
M. M. C. Chou ◽  
K. H. Ploog ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Nonpolar m-plane ZnO epilayers and ZnO/Zn0.55Mg0.45O multiple quantum wells were grown on a LiGaO2 (100) substrate by molecular beam epitaxy.

Epitaxial Growth of Aluminum on Silicon Substrates by Metalorganic Molecular Beam Epitaxy using Dimethyl-Ethylamine Alane

1998 ◽  
Vol 37 (Part 1, No. 5A) ◽  
pp. 2602-2605 ◽  
Author(s):  
Yoichiro Neo ◽  
Toshihiro Otoda ◽  
Katumi Sagae ◽  
Hidenori Mimura ◽  
Kuniyoshi Yokoo
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Silicon Substrates ◽  
Metalorganic Molecular Beam Epitaxy

Optical investigations in (In,Ga)As/GaAs quantum wells grown by metalorganic molecular-beam epitaxy

1995 ◽  
Vol 51 (19) ◽  
pp. 13274-13280 ◽  
Author(s):  
J. Leymarie ◽  
C. Monier ◽  
A. Vasson ◽  
A.-M. Vasson ◽  
M. Leroux ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Metalorganic Molecular Beam Epitaxy
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