Low-Temperature Selective Epitaxial Growth of GaAs Using Triethylgallium and Amino-As in Metalorganic Molecular Beam Epitaxy

1994 ◽  
Vol 33 (Part 1, No. 6A) ◽  
pp. 3500-3504 ◽  
Author(s):  
Tadachika Hidaka ◽  
Ikuo Suemune
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Selective Epitaxial Growth ◽  
Metalorganic Molecular Beam Epitaxy

Low-Temperature Selective Growth of ZnSe and ZnS on (001) GaAs Patterned with Carbonaceous Mask by Metalorganic Molecular-Beam Epitaxy

1998 ◽  
Vol 37 (Part 2, No. 3A) ◽  
pp. L272-L274 ◽  
Author(s):  
Akio Ueta ◽  
Adrian Avramescu ◽  
Katsuhiro Uesugi ◽  
Ikuo Suemune ◽  
Hideaki Machida ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Selective Growth ◽  
Metalorganic Molecular Beam Epitaxy

scholarly journals Effect of Aluminum Nitride Buffer Layer Deposited by Molecular Beam Epitaxy on the Growth of Aluminum Nitride Thin Films Deposited by DC Magnetron Sputtering Technique

2021 ◽  
Author(s):  
B. Riah ◽  
Julien Camus ◽  
Abdelhak Ayad ◽  
Mohammad Rammal ◽  
Raouia Zernadji ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Dc Magnetron Sputtering ◽  
Aln Buffer

This paper reports the effect of silicon substrate orientation and aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by DC magnetron sputtering technique at low temperature. The structural analysis has revealed a strong (0001) fiber texture for both substrates Si (100) and (111) and a hetero-epitaxial growth on few nanometers AlN buffer layer grown by MBE on Si (111) substrate. SEM images and XRD characterization have shown an enhancement in AlN crystallinity thanks to AlN (MBE) buffer layer. Raman spectroscopy indicated that the AlN film was relaxed when it deposited on Si (111), in compression on Si (100) and under tension on AlN buffer layer grown by MBE/Si (111) substrates, respectively. The interface between Si (111) and AlN grown by MBE is abrupt and well defined; contrary to the interface between AlN deposited using PVD and AlN grown by MBE. Nevertheless, AlN hetero-epitaxial growth was obtained at low temperature (<250°C).

Low‐temperature (490 °C)GaAs epitaxial growth on (100)Si by molecular beam epitaxy

1993 ◽  
Vol 62 (9) ◽  
pp. 985-987 ◽  
Author(s):  
T. Y. Chiang ◽  
D. H. Yiin ◽  
E. H. Liu ◽  
T. R. Yew
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Molecular Beam
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