High-Resolution Transmission Electron Microscopy of Initial Stage of Radiation Damage of YBa2Cu4OyInduced by 1 MV Electron Beam

1991 ◽  
Vol 30 (Part 2, No. 8A) ◽  
pp. L1375-L1377 ◽  
Author(s):  
Yoshio Matsui ◽  
Kasumi Yanagisawa ◽  
Naohito Fujiwara
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Beam ◽  
High Resolution ◽  
Radiation Damage ◽  
Transmission Electron ◽  
Initial Stage

Electron beam projection nanopatterning using crystal lattice images obtained from high resolution transmission electron microscopy

2009 ◽  
Author(s):  
Hyo-Sung Lee ◽  
Byung-Sung Kim ◽  
Hyun-Mi Kim ◽  
Jung-Sub Wi ◽  
Sung-Wook Nam ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Beam ◽  
High Resolution ◽  
Crystal Lattice ◽  
Transmission Electron ◽  
Lattice Images ◽  
Beam Projection

Direct Observation of Defect Motion in Silicon By High-Resolution Transmission Electron Microscopy

1985 ◽  
Vol 43 ◽  
pp. 358-359
Author(s):  
M. A. Parker ◽  
R. Sinclair
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Beam ◽  
High Resolution ◽  
Crystal Defects ◽  
Incident Electron Beam ◽  
Transmission Electron ◽  
Heating Effects ◽  
Electron Beam Heating

Observations of defect motion by high resolution transmission electron microscopy (HRTEM) are rare. Unfortunately, the application of this technique has been limited to a few unique materials, those that can obtain sufficient thermal energy for the initiation of atomic motion through the heating effects of the incident electron beam. In earlier work, it was speculated that events such as the motion of crystal defects, observed in cadmium telluride (CdTe) with the electron beam heating method, might become evident in materials such as silicon (Si) if only sufficiently high temperatures could be achieved (∼ 600°C) in-situ.A silicon specimen with a suitable population of defects was chosen for examination; it consisted of a cross-section of.3 μ ﹛100﹜ silicon on ﹛1102﹜ sapphire (SOS from Union Carbide) which was implant amorphized by 28Si+ ion implantation at an energy of ∼ 170keV.

Electron beam-induced surface modification and nano-engineering of carbon nanotubes: Single-walled and multiwalled

2006 ◽  
Vol 21 (12) ◽  
pp. 3109-3123 ◽  
Author(s):  
S. Gupta ◽  
R.J. Patel ◽  
R.E. Giedd
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Electron Beam ◽  
Electron Microscope ◽  
High Resolution ◽  
Band Intensity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

Influence of low and medium energy electron beam (E-beam) irradiation on the single-walled (SW) and multiwalled (MW) carbon nanotube films grown by microwave chemical vapor deposition are investigated. These films were subjected to electron beam energy of 50 keV from scanning electron microscope for 2.5, 5.5, 8.0, and 15 h and 100, 200, and 300 keV from transmission electron microscope electron gun for a few minutes to approximately 2 h continuously. To assess the surface modifications/structural degradation, the films were analyzed prior to and post-irradiation using x-ray diffraction and micro-Raman spectroscopy in addition to in situ monitoring by scanning and high-resolution transmission electron microscopy. A minimal increase in intertube or interplanar spacing (i.e., d002) for MW nanotubes ranging from 3.25–3.29 Å (∼3%) can be analogized to change in c-axis of graphite lattice due to thermal effects measured using x-ray diffraction. Resonance Raman spectroscopy revealed that irradiation generated defects in the lattice evaluated through variation of: the intensity of radial breathing mode (RBM), intensity ratio of D to G band (ID/IG), position of D and G bands and their harmonics (D* and G*). The increase in the defect-induced D band intensity, quenching of RBM intensity, and only a slight increase in G band intensity are some of the implications. The MW nanotubes tend to reach a state of saturation for prolonged exposures, while SW transforming semiconducting to quasi-metallic character. Softening of the q = 0 selection rule is suggested as a possible way to explain these results. It is also suggestive that knock-on collision may not be the primary cause of structural degradation, rather a local gradual reorganization, i.e., sp2+δ ⇔ sp2+δ, sp2 C seems quite possible. Experiments showed that with extended exposures, both kinds of nanotubes displayed various local structural instabilities including pinching, graphitization/amorphization, and forming intra-molecular junction (IMJ) within the area of electron beam focus possibly through amorphous carbon aggregates. They also displayed curling and closure forming nano-ring and helix-like structures while mending their dangling bonds. High-resolution transmission electron microscopy electrons corroborated these conclusions. Manufacturing of nanoscale structures “nano-engineering” of carbon-based systems is tentatively ascribed to irradiation-induced solid-state phase transformation, in contrast to conventional nanotube synthesis from the gas phase.

About Some Peculiarities in Defect Appearence in Elemental and III–V Compound Semiconducting Materials

1988 ◽  
Vol 128 ◽  
Author(s):  
Maria G. Kalitzova ◽  
N. K. Pashov ◽  
G. Vitali ◽  
M. Rossi
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Radiation Damage ◽  
Grey Zone ◽  
Semiconducting Materials ◽  
Damage Distribution ◽  
Direct Information ◽  
Transmission Electron ◽  
Lattice Damage

ABSTRACTHigh Resolution Transmission Electron Microscopy (HRTEM) has been used to obtain direct Information on the structure of damage clusters and in-depth radiation damage distribution in ion-implanted Ge and GaAs with Te+ and Si+ respectively, at doses far below the amorphization threshold. The observed changes in damage contrast in Te+ implanted Ge emphasize the existence of well defined separation between vacancies and interstitials in the lattice damage clusters. For GaAs an integrated “grey zone” was found as a typical effect of Si+ implantation.

scholarly journals A multiscale in situ high temperature high resolution transmission electron microscopy study of ThO2 sintering

Nanoscale ◽  
2021 ◽  
Vol 13 (15) ◽  
pp. 7362-7374
Author(s):  
R. Podor ◽  
V. Trillaud ◽  
G. I. Nkou Bouala ◽  
N. Dacheux ◽  
C. Ricolleau ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
High Resolution ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Transmission Electron Microscopy Study ◽  
Transmission Electron ◽  
Initial Stage

Two-grain systems formed by ThO2 nanospheres are used to study the initial stage of sintering up to 1050 °C using HT-HRTEM. The low temperature crystallite rearrangements as well as grain boundary formation and growth are observed.

Sign in / Sign up

Export Citation Format

Share Document