Visible Electroluminescence from P-Type Crystalline Silicon/Porous Silicon/N-Type Microcrystalline Silicon Carbon PN Junction Diodes

1992 ◽  
Vol 31 (Part 2, No. 5B) ◽  
pp. L616-L618 ◽  
Author(s):  
Toshiro Futagi ◽  
Takahiro Matsumoto ◽  
Masakazu Katsuno ◽  
Yasumitsu Ohta ◽  
Hidenori Mimura ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Crystalline Silicon ◽  
Microcrystalline Silicon ◽  
Pn Junction ◽  
Silicon Carbon ◽  
P Type

Visible Electroluminescence from Pn Junction Type μc-Sic/ Porous Si / c-Si Structures

1992 ◽  
Vol 283 ◽  
Author(s):  
T. Futagi ◽  
T. Matsumoto ◽  
M. Katsuno ◽  
Y. Ohta ◽  
H. Mimura ◽  
...  
Keyword(s):  
Visible Light ◽  
Light Emission ◽  
Crystalline Silicon ◽  
Red Light ◽  
Si Substrate ◽  
Forward Current ◽  
Pn Junction ◽  
Silicon Carbon ◽  
P Type ◽  
Visible Light Emission

ABSTRACTWe have fabricated two kinds of n-type microcrystalline silicon carbon (μc-SiC) / porous silicon (PS) / p-type crystalline silicon (c-Si) pn junctions and demonstrated a visible light emission from them. We have observed three types of visible light emission; an uniform red light emission at a forward current above 12mA/cm2 for the pn junction using a 0.2–0.4 Qcm c-Si substrate, and a very weak white light emission at a forward current of about 90 mA/mm2 and a strong orange-red light emission at a forward current from 200 to 619 mA/mm2for the pn junction using a 3.5–4.5 Ωcm c-Si substrate.

Influence of Etching Time on Surface Structural Properties of p- and n- Type Porous Silicon Nanostructures by Photo-Electrochemical Anodic Etching

2012 ◽  
Vol 576 ◽  
pp. 511-515
Author(s):  
N.A. Asli ◽  
Maslihan Ain Zubaidah ◽  
S.F.M. Yusop ◽  
Khairunnadim Ahmad Sekak ◽  
Mohammad Rusop ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Crystalline Silicon ◽  
Surface Characteristic ◽  
Electrochemical Anodization ◽  
Silicon Nanostructures ◽  
Etching Time ◽  
Force Microscopy ◽  
Etching Parameters ◽  
P Type ◽  
Substrate Doping

Porous silicon nanostructures (PSiN) are nanoporous materials which consist of uniform network of interconnected pore. The structure of PSiN is depending on etching parameters, including current density, HF electrolyte concentration, substrate doping type and level. In this work, the results of a structural p-type and n-type of porous silicon nanostructures were investigated by Field Emission Scanning Electron Microscopy (FESEM) and Atomic Force Microscopy (AFM) is reported. Samples were prepared by photo-electrochemical anodization of p- and n-type crystalline silicon in HF electrolyte at different etching time. The surface morphology of PSiN was studied by FESEM with same magnification shown n-type surface form crack faster than p-type of PSiN. While the topography and roughness of PSiN was characterize by AFM. From topography shown the different etching time for both type PSiN produce different porosity and roughness respectively. There is good agreement between p- and n-type have different in terms of surface characteristic.

A Simple Optical Properties Modeling of Microcrystalline Silicon by the Effective Medium Approximation Method

1996 ◽  
Vol 426 ◽  
Author(s):  
Woo Yeong Cho ◽  
Koeng Su Lim ◽  
Hyun-Mo Cho
Keyword(s):  
Optical Properties ◽  
Approximation Method ◽  
Volume Fraction ◽  
Crystalline Silicon ◽  
Solar Spectrum ◽  
Effective Medium ◽  
Effective Medium Approximation ◽  
Microcrystalline Silicon ◽  
Two Phase ◽  
P Type

AbstractThe optical properties of microcrystalline silicon (µc-Si) were estimated using the EMA (Effective Medium Approximation) method. This modeling was based on two-phase mixture, amorphous silicon (a-Si) and crystalline silicon (c-Si) with volume fractions of fa and fc respectively. From this modeling, it could be possible to understand thatµc-Si has lower light absorption characteristics than a-Si over all solar spectrum by considering hydrogen involvement in embedded a-Si part of iic-Si and crystalline volume fraction. Also, it is proposed that p-type pe- Si is superior to n-type tic-Si because of its high optical gap of Eo4 and its low absorption coefficient spectrum shape.

Porosity Dependence of the Velocity of Surface and Bulk Acoustic Waves in Porous Silicon Carbide Films

2007 ◽  
Vol 556-557 ◽  
pp. 745-748 ◽  
Author(s):  
C.K. Young ◽  
G.T. Andrews ◽  
Maynard J. Clouter ◽  
Yue Ke ◽  
Wolfgang J. Choyke ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Porous Silicon ◽  
Acoustic Waves ◽  
Crystalline Silicon ◽  
Surface Acoustic Waves ◽  
Effective Medium ◽  
Bulk Acoustic Wave ◽  
Porous Silicon Carbide ◽  
Effective Medium Model ◽  
P Type

Brillouin light scattering spectroscopy was used to probe porous silicon carbide films formed from p-type 6H crystalline silicon carbide. The porosities of the films ranged from 30% to 58%. Surface and bulk acoustic wave velocities were measured and compared with those calculated from the Mori-Tanaka acoustic effective medium model. Qualitative agreement is obtained between the experimentally determined velocities and those predicted by Mori-Tanaka acoustic effective medium models with spherical pores and, in the case of surface acoustic waves, also with prolate spheroidal pores with shape factor equal to 0.2. The model demonstrates the importance of morphology in determining the behavior of acoustic waves in a porous material.

Photoluminescent Photonic Devices from Nanostructured Porous Silicon Fabricated Using Lightly Doped Silicon

2009 ◽  
Vol 4 ◽  
pp. 11-17
Author(s):  
O. Sarracino Martínez ◽  
J. Escorcia-Garcia ◽  
J.M. Gracia-Jiménez ◽  
V. Agarwal
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Duty Cycle ◽  
Crystalline Silicon ◽  
Photonic Devices ◽  
Applied Current ◽  
Low Frequencies ◽  
Current Densities ◽  
P Type ◽  
Rugate Filter

In this work, we report the fabrication of porous silicon multilayers using lightly doped, p-type, silicon wafers (resistivity: 14-22 Ω-cm) by pulsed anodic etching. The optical properties have been found to be strongly dependent on the duty-cycle and frequency of the applied current. Less than 50 % of duty-cycle, at low frequencies, is found to show very rough porous silicon – crystalline silicon (PS-cSi) interface. Use of duty cycle above 50 %, in a certain range of frequencies, is found to make the interface smooth. The optical properties of the photonic devices are investigated for 50 % and 75 % of duty-cycle, for different frequencies in the range of 0-1000 Hz, using the current densities of 10, 90 and 150 mA/cm2. The possibility of fabricating rugate filter with this resistivity is also explored.

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