Metalorganic Vapor Phase Epitaxy Growth and Characterization of (AlxGa1-x)0.5In0.5P/Ga0.5In0.5P (x=0.4, 0.7 and 1.0) Quantum Wells on 15°-Off-(100) GaAs Substrates at High Growth Rate

1993 ◽  
Vol 32 (Part 1, No. 10) ◽  
pp. 4460-4466 ◽  
Author(s):  
Ming-Jiunn Jou ◽  
Jyh-Feng Lin ◽  
Chuan-Ming Chang ◽  
Chun-Hung Lin ◽  
Meng-Chyi Wu ◽  
...  
Keyword(s):  
Growth Rate ◽  
Quantum Wells ◽  
Vapor Phase ◽  
High Growth ◽  
Metalorganic Vapor Phase Epitaxy ◽  
High Growth Rate ◽  
Vapor Phase Epitaxy ◽  
Gaas Substrates

scholarly journals High growth rate hydride vapor phase epitaxy at low temperature through use of uncracked hydrides

2018 ◽  
Vol 112 (4) ◽  
pp. 042101 ◽  
Author(s):  
Kevin L. Schulte ◽  
Anna Braun ◽  
John Simon ◽  
Aaron J. Ptak
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
Vapor Phase ◽  
High Growth ◽  
High Growth Rate ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Growth of Highly Crystalline GaN at High Growth Rate by Trihalide Vapor‐Phase Epitaxy

2020 ◽  
Vol 257 (4) ◽  
pp. 1900564
Author(s):  
Akira Yamaguchi ◽  
Daisuke Oozeki ◽  
Naoya Kawamoto ◽  
Nao Takekawa ◽  
Mayank Bulsara ◽  
...  
Keyword(s):  
Growth Rate ◽  
Vapor Phase ◽  
High Growth ◽  
High Growth Rate ◽  
Vapor Phase Epitaxy

High growth rate metal organic vapor phase epitaxy GaN

2008 ◽  
Vol 310 (17) ◽  
pp. 3950-3952 ◽  
Author(s):  
Koh Matsumoto ◽  
Hiroki Tokunaga ◽  
Akinori Ubukata ◽  
Kazumasa Ikenaga ◽  
Yasushi Fukuda ◽  
...  
Keyword(s):  
Growth Rate ◽  
Vapor Phase ◽  
High Growth ◽  
High Growth Rate ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

Metalorganic vapor phase epitaxy growth and characterization of quaternary (Ga,In)(As,Bi) on GaAs substrates

2019 ◽  
Vol 126 (8) ◽  
pp. 085707 ◽  
Author(s):  
Thilo Hepp ◽  
Oliver Maßmeyer ◽  
Dominic A. Duffy ◽  
Stephen J. Sweeney ◽  
Kerstin Volz
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Gaas Substrates

scholarly journals Characteristics of GaAsN∕GaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates

2005 ◽  
Vol 98 (12) ◽  
pp. 123525 ◽  
Author(s):  
A. A. Khandekar ◽  
B. E. Hawkins ◽  
T. F. Kuech ◽  
J. Y. Yeh ◽  
L. J. Mawst ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Type Ii ◽  
Gaas Substrates ◽  
Type Ii Quantum Wells

Growth and characterization of ZnTe epilayers on (100) GaAs substrates by metalorganic vapor phase epitaxy

2007 ◽  
Vol 298 ◽  
pp. 445-448 ◽  
Author(s):  
Yusuke Kume ◽  
Qixin Guo ◽  
Yuji Fukuhara ◽  
Tooru Tanaka ◽  
Mitsuhiro Nishio ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Gaas Substrates

Growth of GaN Nanorods on (0001) Sapphire Substrates by Hydride Vapor Phase Epitaxy

2002 ◽  
Vol 727 ◽  
Author(s):  
Hwa-Mok Kim ◽  
Doo Soo Kim ◽  
Young Wook Chang ◽  
Deuk Young Kim ◽  
Tae Won Kang
Keyword(s):  
Growth Rate ◽  
Vapor Phase ◽  
Substrate Surface ◽  
High Growth ◽  
Average Diameter ◽  
Growth Conditions ◽  
High Growth Rate ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Sapphire Substrates

AbstractGaN nanorods were grown on (0001) sapphire substrates by hydride vapor phase epitaxy HVPE) through a self-assemble process. The nanorods were grown at high growth rate, with the c-axis maintained perpendicular to the substrate surface. The dependence of rod diameter and density on growth conditions was systematically investigated. The average diameter was minimized to 80-120 nm and the density of the GaN nanorods was 100×1012 rods/m2.

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