Characteristics of GaAsN∕GaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates
Keyword(s):
Type Ii
◽
1993 ◽
Vol 32
(Part 1, No. 10)
◽
pp. 4460-4466
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Keyword(s):
Comparison of Ge and GaAs Substrates for Metalorganic Vapor Phase Epitaxy of GaIn(N)As Quantum Wells
2005 ◽
Vol 44
(No. 49)
◽
pp. L1475-L1477
Keyword(s):
2000 ◽
Vol 39
(Part 2, No. 2B)
◽
pp. L143-L145
◽
Keyword(s):
1993 ◽
Vol 32
(Part 2, No. 6A)
◽
pp. L755-L757
◽
2006 ◽
Vol 35
(4)
◽
pp. 744-749
◽
Keyword(s):