Characteristics of polycrystalline-Si thin film transistors fabricated by excimer laser annealing method

IEEE Transactions on Electron Devices ◽

10.1109/16.324604 ◽

1994 ◽

Vol 41 (10) ◽

pp. 1876-1879 ◽

Author(s):

N. Kubo ◽

N. Kusumoto ◽

T. Inushima ◽

S. Yamazaki

Keyword(s):

Thin Film ◽

Excimer Laser ◽

Thin Film Transistors ◽

Laser Annealing ◽

Excimer Laser Annealing ◽

Annealing Method ◽

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Performance of Poly-Si Thin Film Transistors Fabricated by Excimer-Laser Annealing of SiH4- and Si2H6- Source Low Pressure Vapor Deposited a-Si Films with or without Solid-Phase Crystallization

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.37-38.565 ◽

1994 ◽

Vol 37-38 ◽

pp. 565-570 ◽

Author(s):

M. Fuse ◽

I. Asai ◽

M. Hirota ◽

Yoshinari Miyamoto

Keyword(s):

Thin Film ◽

Excimer Laser ◽

Thin Film Transistors ◽

Laser Annealing ◽

Solid Phase ◽

Low Pressure ◽

Excimer Laser Annealing ◽

Solid Phase Crystallization ◽

Si Films ◽

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Application of Ion Doping and Excimer Laser Annealing to Fabrication of Low-Temperature Polycrystalline Si Thin-Film Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.2092 ◽

1994 ◽

Vol 33 (Part 1, No. 4A) ◽

pp. 2092-2099 ◽

Author(s):

Genshiro Kawachi ◽

Takashi Aoyama ◽

Akio Mimura ◽

Nobutake Konishi

Keyword(s):

Thin Film ◽

Low Temperature ◽

Excimer Laser ◽

Thin Film Transistors ◽

Laser Annealing ◽

Excimer Laser Annealing ◽

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Large-Area Doping Process for Fabrication of poly-Si Thin Film Transistors Using Bucket Ion Source and XeCl Excimer Laser Annealing

Japanese Journal of Applied Physics ◽

10.1143/jjap.29.l2370 ◽

1990 ◽

Vol 29 (Part 2, No. 12) ◽

pp. L2370-L2372 ◽

Author(s):

Genshiro Kawachi ◽

Takashi Aoyama ◽

Takaya Suzuki ◽

Akio Mimura ◽

Yasunori Ohno ◽

...

Keyword(s):

Thin Film ◽

Excimer Laser ◽

Thin Film Transistors ◽

Laser Annealing ◽

Excimer Laser Annealing ◽

Si Thin Film ◽

Xecl Excimer Laser

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Multichannel Poly-Si Thin-Film Transistors Prepared by Excimer Laser Annealing With Channel Width Comparable or Smaller Than the Grain Size

IEEE Transactions on Electron Devices ◽

10.1109/ted.2008.925288 ◽

2008 ◽

Vol 55 (8) ◽

pp. 2129-2133 ◽

Author(s):

Po-Chuan Yang ◽

Ping-Sheng Kuo ◽

Si-Chen Lee

Keyword(s):

Thin Film ◽

Excimer Laser ◽

Thin Film Transistors ◽

Laser Annealing ◽

Channel Width ◽

Excimer Laser Annealing ◽

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Bottom-gate poly-Si thin film transistors using XeCl excimer laser annealing and ion doping techniques

IEEE Transactions on Electron Devices ◽

10.1109/16.239735 ◽

1993 ◽

Vol 40 (11) ◽

pp. 1964-1969 ◽

Author(s):

M. Furuta ◽

T. Kawamura ◽

T. Yoshioka ◽

Y. Miyata

Keyword(s):

Thin Film ◽

Excimer Laser ◽

Thin Film Transistors ◽

Laser Annealing ◽

Excimer Laser Annealing ◽

Si Thin Film ◽

Bottom Gate ◽

Xecl Excimer Laser

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High performance poly-si thin film transistors (TFTs) fabricated by xecl excimer laser annealing without post-hydrogenation

10.1109/drc.1994.1009411 ◽

2005 ◽

Author(s):

S. Talwar ◽

Min Cao ◽

K.J. Kramer ◽

G. Verma ◽

K.C. Saraswat ◽

...

Keyword(s):

Thin Film ◽

Excimer Laser ◽

Thin Film Transistors ◽

High Performance ◽

Laser Annealing ◽

Excimer Laser Annealing ◽

Si Thin Film ◽

Xecl Excimer Laser

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Poly-Si thin film transistors fabricated by combining excimer laser annealing and metal induced lateral crystallization

Journal of Non-Crystalline Solids ◽

10.1016/s0022-3093(01)01097-3 ◽

2002 ◽

Vol 299-302 ◽

pp. 1330-1334 ◽

Author(s):

Kee-Chan Park ◽

Jae-Hoon Lee ◽

In-Hyuk Song ◽

Sang-Hoon Jung ◽

Min-Koo Han

Keyword(s):

Thin Film ◽

Excimer Laser ◽

Thin Film Transistors ◽

Laser Annealing ◽

Excimer Laser Annealing ◽

Lateral Crystallization ◽

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Drastic improvement of as-sputtered silicon nitride thin film quality at room temperature by ArF excimer-laser annealing method

Current Applied Physics ◽

10.1016/j.cap.2016.03.017 ◽

2016 ◽

Vol 16 (8) ◽

pp. 876-885 ◽

Author(s):

D.H. Choi ◽

H.S. Kim ◽

S.Y. Oh ◽

C.H. Lee

Keyword(s):

Thin Film ◽

Silicon Nitride ◽

Excimer Laser ◽

Room Temperature ◽

Laser Annealing ◽

Excimer Laser Annealing ◽

Arf Excimer Laser ◽

Annealing Method

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Application of Excimer-Laser Annealing to Amorphous, Poly-Crystal and Single-Crystal Silicon Thin-Film Transistors

phys stat sol (a) ◽

10.1002/(sici)1521-396x(199804)166:2<715::aid-pssa715>3.0.co;2-l ◽

1998 ◽

Vol 166 (2) ◽

pp. 715-728 ◽

Author(s):

M. Matsumura

Keyword(s):

Thin Film ◽

Single Crystal ◽

Excimer Laser ◽

Thin Film Transistors ◽

Laser Annealing ◽

Single Crystal Silicon ◽

Silicon Thin Film ◽

Excimer Laser Annealing ◽

Crystal Silicon

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46.3: High Performance Dual-Gate and Multi Channel Poly-Si TFTs fabricated by XeCl Excimer Laser Annealing on Selectively Floating a-Si Thin Film

SID Symposium Digest of Technical Papers ◽

10.1889/1.1832527 ◽

2003 ◽

Vol 34 (1) ◽

pp. 1310

Author(s):

I. H. Song ◽

S. H. Kang ◽

J. H. Kim ◽

M. K. Han

Keyword(s):

Thin Film ◽

Excimer Laser ◽

High Performance ◽

Laser Annealing ◽

Excimer Laser Annealing ◽

Dual Gate ◽

Si Thin Film ◽

Xecl Excimer Laser

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