A Model for Threshold Voltage Shift under Positive and Negative High-Field Electron Injection in Complementary Metal-Oxide-Semiconductor (CMOS) Transistors

Oxide Semiconductor ◽

Threshold Voltage Shift ◽

Voltage Shift ◽

Field Electron

A possible mechanism of electron injection for the threshold voltage shift of metal‐oxide‐semiconductor field‐effect transistors at low voltage

10.1063/1.343333 ◽

1989 ◽

Vol 65 (10) ◽

pp. 4061-4065 ◽

Cited By ~ 2

Author(s):

Satoshi Tanimoto ◽

Teruyoshi Mihara ◽

Kunihiro Asada ◽

Takuo Sugano

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Low Voltage ◽

Electron Injection ◽

Oxide Semiconductor ◽

Threshold Voltage Shift ◽

Voltage Shift

Effects of high field electron injection into the gate oxide ofP‐channel metal–oxide–semiconductor transistors

10.1063/1.354292 ◽

1993 ◽

Vol 74 (8) ◽

pp. 5078-5085 ◽

Cited By ~ 1

Author(s):

J. M. Moragues ◽

J. Oualid ◽

R. Jerisian ◽

E. Ciantar

Keyword(s):

Metal Oxide ◽

High Field ◽

Gate Oxide ◽

Electron Injection ◽

Oxide Semiconductor ◽

Field Electron

Abnormal threshold voltage shift under hot carrier stress in Ti1−xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistors

10.1063/1.4822158 ◽

2013 ◽

Vol 114 (12) ◽

pp. 124505 ◽

Cited By ~ 2

Author(s):

Jyun-Yu Tsai ◽

Ting-Chang Chang ◽

Wen-Hung Lo ◽

Szu-Han Ho ◽

Ching-En Chen ◽

...

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Oxide Semiconductor ◽

Threshold Voltage Shift ◽

Voltage Shift ◽

Hot Carrier ◽

Hot Carrier Stress

Anomalous Current-Voltage Characteristics and Threshold Voltage Shift in Implanted-Polysilicon-Gated Complementary Metal-Oxide-Semiconductor Field-Effect Transistors with/without Titanium-Polycide Technology

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.l978 ◽

1995 ◽

Vol 34 (Part 2, No. 8A) ◽

pp. L978-L980

Author(s):

Chii-Wen Chen ◽

Yean-Kuen Fang ◽

Gun-Yuan Lee ◽

Jang-Cheng Hsieh ◽

MongSongLiang ◽

...

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Complementary Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Threshold Voltage Shift ◽

Current Voltage ◽

Current Voltage Characteristics

Effect of channeling of halo ion implantation on threshold voltage shift of metal oxide semiconductor field‐effect transistor

Applied Physics Letters ◽

10.1063/1.116237 ◽

1996 ◽

Vol 68 (7) ◽

pp. 938-939 ◽

Cited By ~ 3

Author(s):

Hyunsang Hwang ◽

Dong Hoon Lee ◽

Jae‐Gyung Ahn ◽

Jeong Soo Byun ◽

Dooyoung Yang

Keyword(s):

Ion Implantation ◽

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Semiconductor ◽

Threshold Voltage Shift ◽

Voltage Shift ◽

Effect Transistor

Stress-Polarity-Independent Negative Threshold Voltage Shift in HfO2/TiN P-Channel Metal Oxide Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.136 ◽

2008 ◽

Vol 47 (1) ◽

pp. 136-138

Author(s):

Hokyung Park ◽

Rino Choi ◽

Byoung Hun Lee ◽

Gennadi Bersuker ◽

Hyunsang Hwang

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Semiconductor ◽

Threshold Voltage Shift ◽

Voltage Shift ◽

Effect Transistor

Time‐dependent changes of parasitic effects induced by high‐field electron injection in metal‐oxide‐semiconductor transistors

10.1063/1.347700 ◽

1991 ◽

Vol 69 (1) ◽

pp. 528-530

Author(s):

Yasushiro Nishioka ◽

Masataka Kato ◽

Yuzuru Ohji ◽

T. P. Ma

Keyword(s):

Metal Oxide ◽

High Field ◽

Electron Injection ◽

Time Dependent ◽

Oxide Semiconductor ◽

Field Electron ◽

Parasitic Effects

Study on individual traps in metal–oxide–semiconductor field-effect transistors by means of thermally stimulated threshold voltage shift

Journal of Thermal Analysis and Calorimetry ◽

10.1007/s10973-015-5097-8 ◽

2015 ◽

Vol 122 (3) ◽

pp. 1299-1305 ◽

Cited By ~ 1

Author(s):

Yoshiki Yonamoto

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Oxide Semiconductor ◽

Threshold Voltage Shift ◽

Voltage Shift

Anomalous increase in hot-carrier-induced threshold voltage shift in n-type drain extended metal-oxide-semiconductor transistors

Applied Physics Letters ◽

10.1063/1.2901878 ◽

2008 ◽

Vol 92 (11) ◽

pp. 113509 ◽

Cited By ~ 1

Author(s):

Jone F. Chen ◽

Shiang-Yu Chen ◽

J. R. Lee ◽

Kuo-Ming Wu ◽

Tsung-Yi Huang ◽

...

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Oxide Semiconductor ◽

Anomalous Increase ◽

Threshold Voltage Shift ◽

Voltage Shift ◽

Hot Carrier

Rapid thermal annealing and the anomalous threshold voltage shift of metal‐oxide‐semiconductor structure inn+polycrystalline silicon gate complementary metal‐oxide‐semiconductor technology

Applied Physics Letters ◽

10.1063/1.107910 ◽

1992 ◽

Vol 61 (4) ◽

pp. 447-449 ◽

Cited By ~ 7

Author(s):

Y. K. Fang ◽

J. C. Hsieh ◽

C. W. Chen ◽

C. H. Koung ◽

N. S. Tsai ◽

...

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Polycrystalline Silicon ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor Structure

Oxide Semiconductor ◽

Semiconductor Technology ◽

Threshold Voltage Shift ◽

Anomalous Threshold ◽