Rapid thermal annealing and the anomalous threshold voltage shift of metal‐oxide‐semiconductor structure inn+polycrystalline silicon gate complementary metal‐oxide‐semiconductor technology

Oxide Semiconductor ◽

Metal Oxide Semiconductor Structure

Threshold Voltage Shift ◽

Anomalous Threshold ◽

Anomalous Current-Voltage Characteristics and Threshold Voltage Shift in Implanted-Polysilicon-Gated Complementary Metal-Oxide-Semiconductor Field-Effect Transistors with/without Titanium-Polycide Technology

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.l978 ◽

1995 ◽

Vol 34 (Part 2, No. 8A) ◽

pp. L978-L980

Author(s):

Chii-Wen Chen ◽

Yean-Kuen Fang ◽

Gun-Yuan Lee ◽

Jang-Cheng Hsieh ◽

MongSongLiang ◽

...

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Oxide Semiconductor ◽

Threshold Voltage Shift ◽

Current Voltage ◽

Current Voltage Characteristics

Six‐track multi‐finger standard cell library design for near‐threshold voltage operation in 130 nm complementary metal oxide semiconductor technology

IET Circuits Devices & Systems ◽

10.1049/iet-cds.2018.5542 ◽

2019 ◽

Vol 13 (5) ◽

pp. 710-716 ◽

Cited By ~ 1

Author(s):

Yang Wei Lim ◽

Noor Ain Kamsani ◽

Roslina Mohd Sidek ◽

Shaiful Jahari Hashim ◽

Fakhrul Zaman Rokhani

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Oxide Semiconductor ◽

Standard Cell ◽

Library Design ◽

Standard Cell Library ◽

Cell Library

A Model for Threshold Voltage Shift under Positive and Negative High-Field Electron Injection in Complementary Metal-Oxide-Semiconductor (CMOS) Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.969 ◽

1995 ◽

Vol 34 (Part 1, No. 2B) ◽

pp. 969-972 ◽

Cited By ~ 13

Author(s):

Tomasz Broż ◽

Y. David Chan ◽

Chand R. Viswanathan

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

High Field ◽

Electron Injection ◽

Oxide Semiconductor ◽

Threshold Voltage Shift ◽

Voltage Shift ◽

Field Electron

A novel way to improve the quantum efficiency of silicon light-emitting diode in a standard silicon complementary metal–oxide–semiconductor technology

Journal of Applied Physics ◽

10.1063/1.4795170 ◽

2013 ◽

Vol 113 (10) ◽

pp. 103106 ◽

Cited By ~ 21

Author(s):

Kaikai Xu ◽

G. P. Li

Keyword(s):

Metal Oxide ◽

Quantum Efficiency ◽

Light Emitting Diode ◽

Oxide Semiconductor ◽

Light Emitting

Characterization of High-Performance Polycrystalline Silicon Complementary Metal–Oxide–Semiconductor Circuits

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.51 ◽

2007 ◽

Vol 46 (1) ◽

pp. 51-55 ◽

Cited By ~ 16

Author(s):

Genshiro Kawachi ◽

Yoshiaki Nakazaki ◽

Hiroyuki Ogawa ◽

Masayuki Jyumonji ◽

Noritaka Akita ◽

...

Keyword(s):

Metal Oxide ◽

Polycrystalline Silicon ◽

High Performance ◽

Oxide Semiconductor ◽

Semiconductor Circuits

The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology

Chinese Physics B ◽

10.1088/1674-1056/20/12/129401 ◽

2011 ◽

Vol 20 (12) ◽

pp. 129401 ◽

Cited By ~ 2

Author(s):

Jun-Rui Qin ◽

Shu-Ming Chen ◽

Bi-Wei Liu ◽

Zheng Liu ◽

Bin Liang ◽

...

Keyword(s):

Metal Oxide ◽

Oxide Semiconductor ◽

Charge Collection ◽

Single Event ◽

Modulation Effect ◽

Single Event Transient ◽

Substrate Doping

Soft Error Hardened Memory Design for Nanoscale Complementary Metal Oxide Semiconductor Technology

IEEE Transactions on Reliability ◽

10.1109/tr.2015.2410275 ◽

2015 ◽

Vol 64 (2) ◽

pp. 596-602 ◽

Cited By ~ 12

Author(s):

Jing Guo ◽

Liyi Xiao ◽

Tianqi Wang ◽

Shanshan Liu ◽

Xu Wang ◽

...

Keyword(s):

Metal Oxide ◽

Soft Error ◽

Oxide Semiconductor ◽

Memory Design

Design and demonstration of antenna-coupled Schottky diodes in a foundry complementary metal-oxide semiconductor technology for electronic detection of far-infrared radiation

Journal of Applied Physics ◽

10.1063/1.5083689 ◽

2019 ◽

Vol 125 (19) ◽

pp. 194501 ◽

Cited By ~ 3

Author(s):

Z. Ahmad ◽

A. Lisauskas ◽

H. G. Roskos ◽

K. K. O

Keyword(s):

Metal Oxide ◽

Infrared Radiation ◽

Schottky Diodes ◽

Far Infrared ◽

Oxide Semiconductor ◽

Electronic Detection ◽

Far Infrared Radiation

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Empirical implantation damage model and its effect on reverse short channel effect for 0.35 μm complementary metal–oxide–semiconductor technology

10.1116/1.589934 ◽

1998 ◽

Vol 16 (1) ◽

pp. 430

Author(s):

Jongmin Kim

Keyword(s):

Metal Oxide ◽

Damage Model ◽

Oxide Semiconductor ◽

Short Channel ◽

Short Channel Effect ◽

Implantation Damage ◽

Channel Effect

Bit Swapping Linear Feedback Shift Register for Low Power Application Using 130nm Complementary Metal Oxide Semiconductor Technology

International Journal of Engineering ◽

10.5829/idosi.ije.2017.30.08b.03 ◽

2017 ◽

Keyword(s):

Metal Oxide ◽

Low Power ◽

Shift Register ◽

Oxide Semiconductor ◽

Linear Feedback ◽

Feedback Shift Register ◽

Power Application