More than $\bf 10^{3}$ Times Photoluminescence Intensity Recovery by Silicon Interface-Control-Layer-Based Surface Passivation of Near-Surface Quantum Wells

1995 ◽  
Vol 34 (Part 2, No. 4B) ◽  
pp. L495-L498 ◽  
Author(s):  
Hideki Hasegawa ◽  
Satoshi Kodama ◽  
Satoshi Koyanagi ◽  
Tamotsu Hashizume
Keyword(s):  
Quantum Wells ◽  
Surface Passivation ◽  
Photoluminescence Intensity ◽  
Near Surface ◽  
Interface Control ◽  
Silicon Interface ◽  
Control Layer

Successful Surface Passivation of Air-Exposed AlGaAs by a Silicon Interface Control Layer-Based Technique

1997 ◽  
Vol 36 (Part 1, No. 3B) ◽  
pp. 1756-1762 ◽  
Author(s):  
Kengo Ikeya ◽  
Tamotsu Hashizume ◽  
Hideki Hasegawa
Keyword(s):  
Surface Passivation ◽  
Interface Control ◽  
Silicon Interface ◽  
Control Layer

A Novel Surface Pivation Structure for III-V Compound Semiconductors Utilizing a Silicon Interface Control Layer and its Application

1999 ◽  
Vol 573 ◽  
Author(s):  
Tamotsu Hashizume ◽  
Hideki Hasegawa
Keyword(s):  
Surface Characterization ◽  
Surface Passivation ◽  
Great Influence ◽  
Compound Semiconductors ◽  
Semiconductor Surface ◽  
The Novel ◽  
Strained Si ◽  
Interface Control ◽  
Silicon Interface ◽  
Control Layer

ABSTRACTThe present status of surface passivation research for III-V compound semiconductors utilizing a novel unique structure including a silicon interface control layer (Si ICL) is presented and discussed. The basic principle of passivation is to insert an ultrathin MBE-grown Si layer between the III-V compound semiconductor and a Si-based thick insulator so as to terminate the surface bonds of the III-V material with Si atoms and then to transfer Si-bonds smoothly to those of the Si based insulator. Based on the calculation of quantized levels in strained Si ICL, the passivation structure was optimized. Such a structure was realized by partial nitridation of Si ICL surface. In-situ surface characterization techniques including newly developed UHV contactless C-V technique, were used for optimization of each passivation step. Surface reconstruction of initial semiconductor surface was found to have a great influence on passivation. In the case of GaAs, the c(4×4) surface is preferable to the (2×4) surface. The novel process has realized the oxide-free surface passivation of InP with a Nssmin value of 2 × 1010 cm−2 eV−1. Furthermore, the novel passivation technique has been successfully applied to the fabrication of MISFETs and IGHEMTs, and the passivation of quantum structures.

Electronic properties of AlxGa1−xAs surface passivated by ultrathin silicon interface control layer

1999 ◽  
Vol 141 (3-4) ◽  
pp. 326-332 ◽  
Author(s):  
B Adamowicz ◽  
M Miczek ◽  
K Ikeya ◽  
M Mutoh ◽  
T Saitoh ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Interface Control ◽  
Silicon Interface ◽  
Control Layer
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