Dose Dependence of Recrystallization Behavior in Germanium-Ion-Implanted Polycrystalline Silicon Films

1995 ◽  
Vol 34 (Part 2, No. 7A) ◽  
pp. L803-L805 ◽  
Author(s):  
Myeon-Koo Kang ◽  
Takayuki Matsui ◽  
Hiroshi Kuwano
Keyword(s):  
Polycrystalline Silicon ◽  
Dose Dependence ◽  
Silicon Films ◽  
Recrystallization Behavior ◽  
Polycrystalline Silicon Films ◽  
Ion Implanted

Electrical measurements on ion-implanted LPCVD polycrystalline silicon films

1983 ◽  
Vol 26 (7) ◽  
pp. 657-665 ◽  
Author(s):  
Ruey-Shing Huang ◽  
Chin-Hsiung Cheng ◽  
J.C. Liu ◽  
M.K. Lee ◽  
C.T. Chen
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Electrical Measurements ◽  
Polycrystalline Silicon Films ◽  
Ion Implanted

Ellipsometric analysis of ion-implanted polycrystalline silicon films before and after annealing

2006 ◽  
Vol 496 (2) ◽  
pp. 253-258 ◽  
Author(s):  
Emmanouil Lioudakis ◽  
Androula Nassiopoulou ◽  
Andreas Othonos
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Before And After ◽  
Polycrystalline Silicon Films ◽  
Ion Implanted

Analysis of ion‐implanted amorphous and polycrystalline silicon films as diffusion sources for ultrashallow junctions

1991 ◽  
Vol 70 (3) ◽  
pp. 1397-1404 ◽  
Author(s):  
Keunhyung Park ◽  
Shubneesh Batra ◽  
Sanjay Banerjee ◽  
Gayle Lux ◽  
T. C. Smith
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Ultrashallow Junctions ◽  
Polycrystalline Silicon Films ◽  
Ion Implanted

Redistribution of Ion Implanted Hydrogen in Polycrystalline Silicon Thin Films

1985 ◽  
Vol 59 ◽  
Author(s):  
Ronald N. Legge ◽  
James F. Brown
Keyword(s):  
Thin Films ◽  
Hall Mobility ◽  
Low Temperatures ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Spreading Resistance ◽  
Silicon Thin Films ◽  
Polycrystalline Silicon Films ◽  
Diffusion Of Hydrogen ◽  
Ion Implanted

ABSTRACTThe effect of implanted hydrogen on the resistivity of polycrystalline silicon films has been investigated. The observed reduction in resistivity due to hydrogen is most pronounced for lightly doped films, and is accentuated by a 450°C anneal. An increase in Hall mobility is also observed. The pre-implant resistivity is completely recovered by annealling at 600°C. Diffusion of hydrogen at low temperatures is monitored by local resistivity changes detected with spreading resistance measurements.

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