Redistribution of Ion Implanted Hydrogen in Polycrystalline Silicon Thin Films

1985 ◽  
Vol 59 ◽  
Author(s):  
Ronald N. Legge ◽  
James F. Brown
Keyword(s):  
Thin Films ◽  
Hall Mobility ◽  
Low Temperatures ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Spreading Resistance ◽  
Silicon Thin Films ◽  
Polycrystalline Silicon Films ◽  
Diffusion Of Hydrogen ◽  
Ion Implanted

ABSTRACTThe effect of implanted hydrogen on the resistivity of polycrystalline silicon films has been investigated. The observed reduction in resistivity due to hydrogen is most pronounced for lightly doped films, and is accentuated by a 450°C anneal. An increase in Hall mobility is also observed. The pre-implant resistivity is completely recovered by annealling at 600°C. Diffusion of hydrogen at low temperatures is monitored by local resistivity changes detected with spreading resistance measurements.

Hydrogen Dilution Effect on the Crystallinity of Silicon Films Grow by Hot Wire Cell Method

1999 ◽  
Vol 557 ◽  
Author(s):  
M. Ichikawa ◽  
J. Takeshita ◽  
A. Yamada ◽  
M. Konagai
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Polycrystalline Silicon ◽  
High Growth ◽  
Silicon Films ◽  
Hot Wire ◽  
Cell Method ◽  
Silicon Thin Films ◽  
Hydrogen Dilution ◽  
Polycrystalline Silicon Films

AbstractA new process, the Hot Wire Cell method, was developed and successfully used to grow polycrystalline silicon thin films at a low temperature and high growth rate. In the Hot Wire Cell method, reactant gases are decomposed as a result of reacting with a heated tungsten filament placed near to a substrate and polycrystalline silicon films can be deposited at a growth rate of 1.2nm/s without hydrogen dilution and 0.9nm/s with the use hydrogen dilution. The film crystallinity changed from amorphous to polycrystalline due to the addition of hydrogen, thus hydrogen dilution was effective for improving film crystallinity. Furthermore, we obtained (220) oriented polycrystalline silicon thin films with a 90% crystal fraction by the use of hydrogen dilution. These results showed that the Hot Wire Cell method is promising for the deposition of device-grade polycrystalline silicon films for photovoltaic applications.

Activation of boron and phosphorus atoms implanted in polycrystalline silicon films at low temperatures

2005 ◽  
Vol 487 (1-2) ◽  
pp. 252-254 ◽  
Author(s):  
Nobuyuki Andoh ◽  
Toshiyuki Sameshima ◽  
Yasunori Andoh
Keyword(s):  
Low Temperatures ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Polycrystalline Silicon Films

Electrical measurements on ion-implanted LPCVD polycrystalline silicon films

1983 ◽  
Vol 26 (7) ◽  
pp. 657-665 ◽  
Author(s):  
Ruey-Shing Huang ◽  
Chin-Hsiung Cheng ◽  
J.C. Liu ◽  
M.K. Lee ◽  
C.T. Chen
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Electrical Measurements ◽  
Polycrystalline Silicon Films ◽  
Ion Implanted

Lpcvd Polycrystalline Silicon Thin Films: The Evolution of Structure, Texture and Stress

1990 ◽  
Vol 202 ◽  
Author(s):  
P. Krulevitch ◽  
Tai D. Nguyen ◽  
G. C. Johnson ◽  
R. T. Howe ◽  
H. R. Wenk ◽  
...  
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Compressive Stress ◽  
Polycrystalline Silicon ◽  
Amorphous State ◽  
Processing Conditions ◽  
Columnar Microstructure ◽  
Silicon Thin Films ◽  
Evolution Of Structure ◽  
Polycrystalline Silicon Films

ABSTRACTAn investigation of undoped LPCVD polycrystalline silicon films deposited at temperatures ranging from 605 to 700 C and silane pressures from 300 to 550 mTorr revealed large variations in stress with processing conditions and a correlation between stress and texture. TEM and HRTEM analysis show that morphology differences also exist. At lower temperatures (≈605 C) and higher pressures (≈400 mTorr), the films appear to deposit in an amorphous state and crystallize during the deposition to form microstructures characterized by equi-axed grains, tensile residual stress, and a texture with {110} and {11/} (/=2 or 3) components. Higher temperatures (between 620 and 650 C) produce films that nucleate at the Si02 interface, creating a {110} oriented columnar microstructure. At 700 C, the grains are still columnar, but the dominant texture is {100}. Films deposited at temperatures greater than 620 C exhibit compressive stress, and some contain regions of hexagonal silicon. This paper proposes possible causes of the varying stresses, textures, and microstructures in the films.

EELS microanalysis of polycrystalline silicon thin films for solar cells grown at low temperatures

2000 ◽  
Vol 63 (2) ◽  
pp. 177-184 ◽  
Author(s):  
Michael Stöger ◽  
Michael Nelhiebel ◽  
Peter Schattschneider ◽  
Viktor Schlosser ◽  
Alexander Breymesser ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Low Temperatures ◽  
Polycrystalline Silicon ◽  
Silicon Thin Films
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