Characterization of $\bf Pb(Zr_{\ninmbi x}Ti_{1-{\ninmbi x}})O_{3}$ Thin Film on Silicon Substrate with Heteroepitaxial Yttria-Stabilized Zirconia (YSZ) Buffer Layer

The influence of a rare earth oxide/yttria-stabilized zirconia (YSZ) double buffer layer structure on the orientation of a perovskite thin film was investigated on (100) silicon substrates. A calcium titanate perovskite film with a mixture of (110) and (100) orientation was grown epitaxially on a YSZ buffer layer. Since rare earth oxides have almost the same chemical nature and different lattice parameters, it is anticipated that the lattice parameter of the buffer layer can be controlled by changing the rare earth element. An (100) oriented epitaxial calcium titanate film was obtained by changing the composition of rare earth oxides on the YSZ/Si substrate.

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Characterization of sputtered yttria‐stabilized zirconia thin film and its application to a metal‐insulator‐semiconductor structure

Journal of Applied Physics ◽

10.1063/1.351103 ◽

1992 ◽

Vol 71 (5) ◽

pp. 2309-2314 ◽

Cited By ~ 21

Author(s):

Yuji Miyahara

Keyword(s):

Thin Film ◽

Semiconductor Structure ◽

Yttria Stabilized Zirconia ◽

Stabilized Zirconia ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Zirconia Thin Film

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Characterization of the yttria-stabilized zirconia thin film electrophoretic deposited on La0.8Sr0.2MnO3 substrate

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2006.07.069 ◽

2007 ◽

Vol 436 (1-2) ◽

pp. 351-357 ◽

Cited By ~ 14

Author(s):

Koho Yang ◽

Jung-Hsiung Shen ◽

Kai-Yun Yang ◽

I-Ming Hung ◽

Kuan-Zong Fung ◽

...

Keyword(s):

Thin Film ◽

Yttria Stabilized Zirconia ◽

Stabilized Zirconia ◽

Zirconia Thin Film

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Ferroelectric La-Sr-Co-O / Pb-Zr-TI-O / La-Sr-Co-O Heterostructures on Silicon: Reliability Testing

MRS Proceedings ◽

10.1557/proc-310-195 ◽

1993 ◽

Vol 310 ◽

Cited By ~ 9

Author(s):

R. Ramesh ◽

T. Sands ◽

V. G. Keramidas ◽

D.K. Fork

Keyword(s):

Thin Film ◽

Buffer Layer ◽

Applied Field ◽

Room Temperature ◽

Yttria Stabilized Zirconia ◽

Layered Perovskite ◽

Reliability Testing ◽

Stabilized Zirconia ◽

Thin Film Capacitors ◽

Large Remnant Polarization

AbstractWe report results of pulsed electrical testing of ferroelectric Pb0.9La0.1Zr0.2Ti0.8O3 thin film capacitors with symmetrical La-Sr-Co-O top and bottom electrodes at room temperature and at 100°C. They have been grown on [001] Si with a Yttria stabilized zirconia (YSZ) buffer layer. A layered perovskite “template” layer (200-300Å thick), grown between the YSZ buffer layer and the bottom La-Sr-Co-O electrode, is critical for obtaining the required orientation of the subsequent layers. When compared to the capacitors grown with Y-Ba-Cu-O (YBCO) top and bottom electrodes, these structures possess two advantages : (1) the growth temperatures are lower by 60-150°C; (ii) the capacitors show a large remnant polarization, δP, ( δP = switched polarization -non-switched polarization), 25-30 μC/cm2, for an applied voltage of only 2V (applied field of 70kV/cm). The fatigue, retention and aging characteristics of these new structures are excellent at both room temperature and at 100°C.

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