Improved Properties of Silicon Nitride Films Prepared by the Catalytic Chemical Vapor Deposition Method

1997 ◽  
Vol 36 (Part 1, No. 11) ◽  
pp. 7035-7040 ◽  
Author(s):  
Shinya Okada ◽  
Hideki Matsumura
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

Properties of Silicon Nitride Films Prepared by Combination of Catalytic-Nitridation and Catalytic-Cvd

2003 ◽  
Vol 762 ◽  
Author(s):  
A. Izumi ◽  
A. Kikkawa ◽  
K. Higashimine ◽  
H. Matsumura
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Method ◽  
Catalytic Chemical Vapor Deposition ◽  
Flat Interface ◽  
Silicon Nitride Films ◽  
Catalytic Cvd

AbstractThis paper reports about the interface of silicon nitride (SiNx) formed on Si(100) prepared by combination of catalytic-nitridation and catalytic-vapor deposition method in a catalytic chemical vapor deposition system. It is found that flat interface of SiNx/Si(100) is formed by inserting nitridation layer before growing the SiNx films.

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

Fabrication of PTFE thin films by dual catalytic chemical vapor deposition method

2008 ◽  
Vol 516 (5) ◽  
pp. 687-690 ◽  
Author(s):  
Hiroaki Yasuoka ◽  
Masahiro Yoshida ◽  
Ken Sugita ◽  
Keisuke Ohdaira ◽  
Hideyuki Murata ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
Catalytic Chemical Vapor Deposition
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