Nanometer Pattern-Mask Fabricated by Conventional Photolithography

1997 ◽  
Vol 36 (Part 1, No. 12B) ◽  
pp. 7786-7790 ◽  
Author(s):  
Kouji Fujimaru ◽  
Takashi Ono ◽  
Ryuta Nagai ◽  
Hideki Matsumura
1999 ◽  
Vol 584 ◽  
Author(s):  
Shingi Hashioka ◽  
Hideki Matsumura

AbstractA novel method to prepare nanometer-size patterns by using currently available massproduction technology is proposed. In this study, a contact pattern-mask with nanometersize slit is fabricated by combination of photolithography and anodic oxidation of metal. The slit width of the pattern-mask can be controlled in the order of nano-meters by anodic voltage during oxidation of side-wall of the metal. 10nm width trench is formed in Si substrate by using such nanometer slit-mask. It is suggested that the technique can be utilized as fabrication process of the nano-scale devices.


Proceedings ◽  
2017 ◽  
Vol 1 (4) ◽  
pp. 325 ◽  
Author(s):  
Isaac Gállego ◽  
Brendan Manning ◽  
Joan Daniel Prades ◽  
Mònica Mir ◽  
Josep Samitier ◽  
...  

1997 ◽  
Vol 35 (1-4) ◽  
pp. 113-116 ◽  
Author(s):  
T. Ishii ◽  
H. Nozawa ◽  
T. Tamamura

2012 ◽  
Vol 1512 ◽  
Author(s):  
Jian-Wei Ho ◽  
Qixun Wee ◽  
Jarrett Dumond ◽  
Li Zhang ◽  
Keyan Zang ◽  
...  

ABSTRACTA combinatory approach of Step-and-Flash Imprint Lithography (SFIL) and Metal-Assisted Chemical Etching (MacEtch) was used to generate near perfectly-ordered, high aspect ratio silicon nanowires (SiNWs) on 4" silicon wafers. The ordering and shapes of SiNWs depends only on the SFIL nanoimprinting mould used, thereby enabling arbitary SiNW patterns not possible with nanosphere and interference lithography (IL) to be generated. Very densely packed SiNWs with periodicity finer than that permitted by conventional photolithography can be produced. The height of SiNWs is, in turn, controlled by the etching duration. However, it was found that very high aspect ratio SiNWs tend to be bent during processing. Hexagonal arrays of SiNW with circular and hexagonal cross-sections of dimensions 200nm and less were produced using pillar and pore patterned SFIL moulds. In summary, this approach allows highlyordered SiNWs to be fabricated on a wafer-level basis suitable for semiconductor device manufacturing.


2012 ◽  
Vol 503-504 ◽  
pp. 615-619 ◽  
Author(s):  
Alonggot Limcharoen ◽  
Chupong Pakpum ◽  
Pichet Limsuwan

The experiments to study the feasibility to fabricate the 45 slant on p-type (100)-oriented silicon wafer were done. The various mask shapes, rectangular, cross, circle and boomerang, were patterned on the SiO2 mask by utilizing the conventional photolithography and dry etching process for investigating the anisotropic wet etch characteristic. The edge of masks were align in two crystal direction, 110 and 100 that is allowable to get a better understanding about the crystal orientation and the angle between planes in a crystal system. The very low etch rate,  50 nm/min, process regime was selected to fabricate the 45 slant with the concept is the lowest of an overall etch rate in the system to reach the level that is possible to detect the (110) plane. The etch recipe can be used for the next development work to built a housing of the laser light source for applying in a data storage technology.


Micromachines ◽  
2021 ◽  
Vol 12 (12) ◽  
pp. 1487
Author(s):  
Belal Ahmad ◽  
Hugo Chambon ◽  
Pierre Tissier ◽  
Aude Bolopion

In this paper, we propose a laser actuated microgripper that can be activated remotely for micromanipulation applications. The gripper is based on an optothermally actuated polymeric chevron-shaped structure coated with optimized metallic layers to enhance its optical absorbance. Gold is used as a metallic layer due to its good absorption of visible light. The thermal deformation of the chevron-shaped actuator with metallic layers is first modeled to identify the parameters affecting its behavior. Then, an optimal thickness of the metallic layers that allows the largest possible deformation is obtained and compared with simulation results. Next, microgrippers are fabricated using conventional photolithography and metal deposition techniques for further characterization. The experiments show that the microgripper can realize an opening of 40 µm, a response time of 60 ms, and a generated force in the order of hundreds of µN. Finally, a pick-and-place experiment of 120 µm microbeads is conducted to confirm the performance of the microgripper. The remote actuation and the simple fabrication and actuation of the proposed microgripper makes it a highly promising candidate to be utilized as a mobile microrobot for lab-on-chip applications.


2009 ◽  
Vol 48 (3) ◽  
pp. 03B020 ◽  
Author(s):  
Ki-Cheol Cheon ◽  
Juhyun Woo ◽  
Deuk-Soo Jung ◽  
Mungi Park ◽  
Hwan Kim ◽  
...  

1975 ◽  
Vol 5 (6) ◽  
pp. 498-500 ◽  
Author(s):  
Dean G. Purcell ◽  
Alan L. Stewart ◽  
Jerry Davis ◽  
James Huntermark ◽  
Steve Robbins ◽  
...  

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Run Shi ◽  
Chengzi Huang ◽  
Linfei Zhang ◽  
Abbas Amini ◽  
Kai Liu ◽  
...  

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