Optical Properties of GaN Thin Films on Sapphire Substrates Characterized by Variable-Angle Spectroscopic Ellipsometry

Tao Yang; Shigeo Goto; Masahiko Kawata; Kenji Uchida; Atsuko Niwa; Jun Gotoh

doi:10.1143/jjap.37.l1105

Optical Properties of GaN Thin Films on Sapphire Substrates Characterized by Variable-Angle Spectroscopic Ellipsometry

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.l1105 ◽

1998 ◽

Vol 37 (Part 2, No. 10A) ◽

pp. L1105-L1108 ◽

Cited By ~ 28

Author(s):

Tao Yang ◽

Shigeo Goto ◽

Masahiko Kawata ◽

Kenji Uchida ◽

Atsuko Niwa ◽

...

Keyword(s):

Thin Films ◽

Optical Properties ◽

Spectroscopic Ellipsometry ◽

Sapphire Substrates ◽

Variable Angle ◽

Variable Angle Spectroscopic Ellipsometry

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Surface topography and optical properties of Ge-Sb(As)-S-Te thin films by atomic-force microscopy and variable angle spectroscopic ellipsometry

Journal of Physics Conference Series ◽

10.1088/1742-6596/356/1/012019 ◽

2012 ◽

Vol 356 ◽

pp. 012019 ◽

Cited By ~ 2

Author(s):

N Dulgheru (Nedelcu) ◽

M Anastasescu ◽

M Nicolescu ◽

M Stoica ◽

M Gartner ◽

...

Keyword(s):

Thin Films ◽

Atomic Force Microscopy ◽

Optical Properties ◽

Surface Topography ◽

Spectroscopic Ellipsometry ◽

Force Microscopy ◽

Atomic Force ◽

Variable Angle ◽

Variable Angle Spectroscopic Ellipsometry

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Optical Properties of GaN and Other III-Nitride Semiconductor Materials Studied by Variable Angle Spectroscopic Ellipsometry

10.21236/ada391193 ◽

2000 ◽

Author(s):

Huade W. Yao

Keyword(s):

Optical Properties ◽

Spectroscopic Ellipsometry ◽

Semiconductor Materials ◽

Variable Angle ◽

Nitride Semiconductor ◽

Variable Angle Spectroscopic Ellipsometry

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The study of the optical properties of In/sub 0.52/(Al/sub x/Ga/sub 1-x/)/sub 0.48/As by variable angle spectroscopic ellipsometry

Seventh International Conference on Indium Phosphide and Related Materials ◽

10.1109/iciprm.1995.522125 ◽

2002 ◽

Cited By ~ 1

Author(s):

J.-W. Pan ◽

J.-L. Shieh ◽

J.-H. Gau ◽

J.-I. Chyi

Keyword(s):

Optical Properties ◽

Spectroscopic Ellipsometry ◽

Variable Angle ◽

Variable Angle Spectroscopic Ellipsometry

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Measurement of superlattice optical properties by variable angle spectroscopic ellipsometry

Superlattices and Microstructures ◽

10.1016/0749-6036(88)90273-x ◽

1988 ◽

Vol 4 (1) ◽

pp. 97-99 ◽

Cited By ~ 11

Author(s):

P.G. Snyder ◽

B.N. De ◽

K.G. Merkel ◽

J.A. Woollam ◽

D.W. Langer ◽

...

Keyword(s):

Optical Properties ◽

Spectroscopic Ellipsometry ◽

Variable Angle ◽

Variable Angle Spectroscopic Ellipsometry

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Anisotropic optical constants of electroluminescent conjugated polymer thin films determined by variable-angle spectroscopic ellipsometry

Journal of Applied Physics ◽

10.1063/1.2778744 ◽

2007 ◽

Vol 102 (6) ◽

pp. 063505 ◽

Cited By ~ 25

Author(s):

Jessica M. Winfield ◽

Carrie L. Donley ◽

Ji-Seon Kim

Keyword(s):

Thin Films ◽

Spectroscopic Ellipsometry ◽

Conjugated Polymer ◽

Optical Constants ◽

Polymer Thin Films ◽

Variable Angle ◽

Variable Angle Spectroscopic Ellipsometry

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Optical characterization by variable angle spectroscopic ellipsometry of nitrogen-doped Mg Zn1−O thin films prepared by the plasma-assisted reactive evaporation method

Thin Solid Films ◽

10.1016/j.tsf.2014.02.091 ◽

2014 ◽

Vol 571 ◽

pp. 615-619 ◽

Cited By ~ 3

Author(s):

Takami Abe ◽

Akira Nakagawa ◽

Michiko Nakagawa ◽

Tetsuya Chiba ◽

Shuzo Takahashi ◽

...

Keyword(s):

Thin Films ◽

Spectroscopic Ellipsometry ◽

Optical Characterization ◽

Evaporation Method ◽

Nitrogen Doped ◽

Reactive Evaporation ◽

Variable Angle ◽

Variable Angle Spectroscopic Ellipsometry

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Optical properties of Cd0.9Zn0.1 Te studied by variable angle spectroscopic ellipsometry between 0.75 and 6.24 eV

Journal of Electronic Materials ◽

10.1007/s11664-999-0067-1 ◽

1999 ◽

Vol 28 (6) ◽

pp. 760-765 ◽

Cited By ~ 7

Author(s):

H. W. Yao ◽

J. C. Erickson ◽

H. B. Barber ◽

R. B. James ◽

H. Hermon

Keyword(s):

Optical Properties ◽

Spectroscopic Ellipsometry ◽

Variable Angle ◽

Variable Angle Spectroscopic Ellipsometry

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Optical characterization of polycrystalline ZnSe1−xTex thin films using variable angle spectroscopic ellipsometry and spectrophotmetery techniques

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2015.06.048 ◽

2015 ◽

Vol 39 ◽

pp. 735-741 ◽

Cited By ~ 10

Author(s):

E.R. Shaaban ◽

M. El-Hagary ◽

M. Emam-Ismail ◽

A.M. Abd Elnaeim ◽

S.H. Moustafa ◽

...

Keyword(s):

Thin Films ◽

Spectroscopic Ellipsometry ◽

Optical Characterization ◽

Variable Angle ◽

Variable Angle Spectroscopic Ellipsometry

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Investigation of HfO2 Thin Films on Si by X-ray Photoelectron Spectroscopy, Rutherford Backscattering, Grazing Incidence X-ray Diffraction and Variable Angle Spectroscopic Ellipsometry

Crystals ◽

10.3390/cryst8060248 ◽

2018 ◽

Vol 8 (6) ◽

pp. 248 ◽

Cited By ~ 11

Author(s):

Xuguang Luo ◽

Yao Li ◽

Hong Yang ◽

Yuanlan Liang ◽

Kaiyan He ◽

...

Keyword(s):

Thin Films ◽

Spectroscopic Ellipsometry ◽

Photoelectron Spectroscopy ◽

Grazing Incidence ◽

Rutherford Backscattering ◽

X Ray Diffraction ◽

X Ray ◽

Variable Angle ◽

Variable Angle Spectroscopic Ellipsometry

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Variable Angle Spectroscopic Ellipsometry Studies of HgI2

MRS Proceedings ◽

10.1557/proc-302-341 ◽

1993 ◽

Vol 302 ◽

Cited By ~ 3

Author(s):

Huade Yao ◽

Blaine Johs

Keyword(s):

Optical Properties ◽

Spectroscopic Ellipsometry ◽

Room Temperature ◽

Field Vector ◽

Electric Field Vector ◽

Aging Effects ◽

Anisotropic Dielectric ◽

Variable Angle ◽

Variable Angle Spectroscopic Ellipsometry ◽

Oriented Parallel

ABSTRACTVariable angle spectroscopic ellipsometry (VASE) measurements were employed to study the optical properties of HgI2. The bulk crystal HgI2 surface was subjected to a 10% KI etching prior to the VASE measurements. SE measurements were performed at room temperature, in air with several different angles of incidence. The uniaxial anisotropic nature of the HgI2 crystal was treated in the VASE analysis. Anisotropic dielectric functions of single crystal HgI2, ε||(wo) and ε⊥(ω), for optical electric field vector oriented parallel and perpendicular to the c axis, respectively, were obtained in the range of ∼2.0 - 5.0 eV. Surface aging effects of the HgI2 crystal, after the 10% KI etching, were characterized by VASE.

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