Effects of Deuterium on Low-Temperature Si Epitaxy by Photo-Chemical Vapor Deposition

1991 ◽  
Vol 30 (Part 1, No. 5) ◽  
pp. 893-896 ◽  
Author(s):  
Ying Jia ◽  
Akira Yamada ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
2000 ◽  
Vol 609 ◽  
Author(s):  
Hong-Seung Kim ◽  
Kyu-Hwan Shim ◽  
Jeong-Yong Lee ◽  
Jin-Yeong Kang

ABSTRACTThis paper presents the experimental results of selective Si epitaxial growth from 650 °C to 700 °C on (100) silicon wafers with oxide patterns using reduced pressure chemical vapor deposition with the SiH4-HCl-H2 gas system. In addition, an HCl etching process is introduced and the conditions of the deposition and etching processes are addressed to sustain the selectivity. As a result, we noted that the addition of HCl serves not only to reduce the growth rate on bare Si, but also to suppress the nucleation on SiO2. In these experiments it has been also observed that the Si layer was grown to 3 nm while sustaining the selectivity. Moreover, further introduction of the HCl etching process following the deposition allowed a 50 nm-thick film to sustain the selectivity for twenty periods.


ACS Omega ◽  
2021 ◽  
Author(s):  
Muhammad Aniq Shazni Mohammad Haniff ◽  
Nur Hamizah Zainal Ariffin ◽  
Poh Choon Ooi ◽  
Mohd Farhanulhakim Mohd Razip Wee ◽  
Mohd Ambri Mohamed ◽  
...  

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