30-nm-Gate InP-Based Lattice-Matched High Electron Mobility Transistors with 350 GHz Cutoff Frequency

1999 ◽  
Vol 38 (Part 2, No. 2B) ◽  
pp. L154-L156 ◽  
Author(s):  
Tetsuya Suemitsu ◽  
Tetsuyoshi Ishii ◽  
Haruki Yokoyama ◽  
Takatomo Enoki ◽  
Yasunobu Ishii ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Cutoff Frequency ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Lattice Matched

Extremely High-Speed Lattice-Matched InGaAs/InAlAs High Electron Mobility Transistors with 472 GHz Cutoff Frequency

2002 ◽  
Vol 41 (Part 2, No. 4B) ◽  
pp. L437-L439 ◽  
Author(s):  
Keisuke Shinohara ◽  
Yoshimi Yamashita ◽  
Akira Endoh ◽  
Kohki Hikosaka ◽  
Toshiaki Matsui ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Speed ◽  
Cutoff Frequency ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Lattice Matched

scholarly journals Microstructural Characterization of Closely-Lattice-Matched AlIn(Ga)N Alloys for High Electron Mobility Transistors

2011 ◽  
Vol 17 (S2) ◽  
pp. 1354-1355
Author(s):  
L Zhou ◽  
L Kirste ◽  
T Lim ◽  
R Aidam ◽  
O Ambacher ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Microstructural Characterization ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Lattice Matched

Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.

Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz

2013 ◽  
Vol 52 (8S) ◽  
pp. 08JN14 ◽  
Author(s):  
Yuanzheng Yue ◽  
Zongyang Hu ◽  
Jia Guo ◽  
Berardi Sensale-Rodriguez ◽  
Guowang Li ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Cutoff Frequency ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

High fT 50-nm-Gate InAlAs/InGaAs High Electron Mobility Transistors Lattice-Matched to InP Substrates

2000 ◽  
Vol 39 (Part 2, No. 8B) ◽  
pp. L838-L840 ◽  
Author(s):  
Yoshimi Yamashita ◽  
Akira Endoh ◽  
Masataka Higashiwaki ◽  
Kohki Hikosaka ◽  
Takashi Mimura ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Inp Substrates ◽  
Lattice Matched
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