Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors
2013 ◽
Vol 19
(1)
◽
pp. 43-46
◽
1999 ◽
Vol 38
(Part 2, No. 2B)
◽
pp. L154-L156
◽
2006 ◽
Vol 45
(4B)
◽
pp. 3349-3354
◽
2000 ◽
Vol 39
(Part 2, No. 8B)
◽
pp. L838-L840
◽
2020 ◽
Vol 53
(17)
◽
pp. 175107
◽
2002 ◽
Vol 41
(Part 2, No. 4B)
◽
pp. L437-L439
◽