Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz
2013 ◽
Vol 52
(8S)
◽
pp. 08JN14
◽
1999 ◽
Vol 38
(Part 2, No. 2B)
◽
pp. L154-L156
◽
2002 ◽
Vol 41
(Part 2, No. 4B)
◽
pp. L437-L439
◽
2021 ◽
Vol 135
◽
pp. 106109