X-Ray Characterization of Buried δ Layers

1998 ◽  
Vol 05 (01) ◽  
pp. 145-149 ◽  
Author(s):  
J. Falta ◽  
D. Bahr ◽  
G. Materlik ◽  
B. H. Müller ◽  
M. Horn-Von Hoegen
Keyword(s):  
Lattice Constant ◽  
Linear Dependence ◽  
Standing Waves ◽  
Interface Roughness ◽  
Tetragonal Distortion ◽  
Detailed Characterization ◽  
X Ray ◽  
Lattice Position

A combination of measurements of crystal truncation roda and X-ray standing waves has been used for a detailed characterization of buried Ge δ layers on Si(001). Measurements of crystal truncation rods reveal the interface roughness, the δ layer lattice constant and the δ layer concentration. From measurements with X-ray standing waves the dopant lattice position and crystallinity of the δ layer are determined. We find a linear dependence of the local tetragonal distortion of the Ge bonding in the δ layer on the Ge concentration in the layer.

Independent Characterization of Density and Interface Roughness of Multilayers Using X-Ray Standing Waves

1995 ◽  
Vol 34 (Part 1, No. 6A) ◽  
pp. 3290-3293
Author(s):  
Tomoaki Kawamura ◽  
Hisataka Takenaka ◽  
Takayoshi Hayashi
Keyword(s):  
Standing Waves ◽  
Interface Roughness ◽  
X Ray

Characterization of amorphous-Si/1ML-Ge/Si(001) Interface Structure by X-ray Standing Waves

2003 ◽  
Vol 42 (Part 1, No. 11) ◽  
pp. 7050-7052 ◽  
Author(s):  
Shinichiro Nakatani ◽  
Kazushi Sumitani ◽  
Akinobu Nojima ◽  
Toshio Takahashi ◽  
Keiichi Hirano ◽  
...  
Keyword(s):  
Standing Waves ◽  
Interface Structure ◽  
X Ray ◽  
Amorphous Si

scholarly journals A detailed characterization of congenital defects and mortality following moderate X-ray doses during neurulation

2017 ◽  
Vol 110 (6) ◽  
pp. 467-482 ◽  
Author(s):  
Kai Craenen ◽  
Mieke Verslegers ◽  
Jasmine Buset ◽  
Sarah Baatout ◽  
Lieve Moons ◽  
...  
Keyword(s):  
Congenital Defects ◽  
Detailed Characterization ◽  
X Ray

Preparation of Magnetically Modified Zeolites and the Application of Metal Ions Adsorption

2011 ◽  
Vol 299-300 ◽  
pp. 764-769
Author(s):  
Ming Liang Yuan ◽  
Liang Yu ◽  
Jia Hua Tao ◽  
Cong Song
Keyword(s):  
Metal Ions ◽  
Industrial Effluents ◽  
Nitrogen Adsorption ◽  
Vibrating Sample Magnetometer ◽  
X Ray Diffraction ◽  
Detailed Characterization ◽  
X Ray ◽  
Magnetic Process ◽  
Coprecipitation Process

Natural zeolites combined with the magnetic iron oxides are prepared by a chemical coprecipitation process. A detailed characterization of our magnetically modified zeolite (MMZ) is given, including powder X-ray diffraction (XRD), nitrogen adsorption and vibrating sample magnetometer (VSM). The results reveal that in comparison with Na-zeolite, the structure of MMZ has no obvious change but its surface area increases from 25.13 m2g-1to 100.90 m2g-1. The adsorption properties of MMZ to Pb2+and Cu2+were studied. The results show that the maximum loading capacities for Pb2+and Cu2+in the initial concentration range are 123.74 and 14.633 mg g-1, respectively. The MMZ can be used as an adsorbent for removal of heavy metal ions from industrial effluents or municipal waters, and the saturated adsorbent is separated from the medium by a simple magnetic process.

Solvothermal Synthesis and Luminescence Properties of Gd2O2S:RE3+ (RE3+=Eu3+/Tb3+) Hollow Sphere

2019 ◽  
Vol 807 ◽  
pp. 1-10 ◽  
Author(s):  
Guang Xi Xu ◽  
Xiao Tong Sang ◽  
Jing Bao Lian ◽  
Nian Chu Wu ◽  
Xue Zhang
Keyword(s):  
Solvothermal Synthesis ◽  
Solvothermal Method ◽  
Raw Materials ◽  
Hollow Spheres ◽  
Hollow Structure ◽  
Molar Ratio ◽  
Detailed Characterization ◽  
X Ray ◽  
Electronic Microscope

Eu3+ and Tb3+ ions singly activated Gd2O2S hollow spheres have been successfully synthesized via solvothermal method by using Gd (NO3)3, Eu (NO3)3, Tb (NO3)3 and thiourea as raw materials. Detailed characterization of the as-prepared samples were obtained by X-ray diffractometry (XRD), field emission scanning electron microscopy (FE-SEM), transmission electronic microscope (TEM) and photoluminescence (PL) spectroscopy. The results demonstrate that at 220 oC for 24 h, the molar ratio of thiourea/Gd3+ has no significant impact on the phase composition of Gd2O2S products. With the reaction time increased from 6 h to 24 h, the morphology of Gd2O2S samples changed from ellipsoidal to near-spheroidal structure, but still remained hollow structure. PL results show that the strongest emission peaks for Gd2O2S:Eu3+ and Gd2O2S:Tb3+ samples were centered at 625 nm and 545 nm, corresponding to the 5D0→7F2 transition of Eu3+ ions and 5D4→7F5 transition of Tb3+ ions, respectively. The quenching concentrations for Eu3+ and Tb3+ ions were 12% and 6%, which can be attributed to the exchange interaction for Eu3+ and Tb3+ ions, respectively.

Grazing-incidence X-Ray Analysis of Surfaces and Thin Films

1991 ◽  
Vol 35 (A) ◽  
pp. 143-150 ◽  
Author(s):  
T. C. Huang
Keyword(s):  
Thin Films ◽  
Depth Profiling ◽  
Grazing Incidence ◽  
Bragg Diffraction ◽  
Interface Roughness ◽  
Phase Identification ◽  
X Ray ◽  
Types Of Information

AbstractGrazing-incidence X-ray analysis techniques which are commonly used for the nondestructive characterization of surfaces and thin films are reviewed. The X-ray reflectivity technicue is used to study surface uniformity and oxidation, layer thickness and density, interface roughness and diffusion, etc. The grazing-incidence in-plane diffraction technique is used to determine in-plane crystallography of epitaxial films. The grazing-incidence asymmetric-Bragg diffraction is used for surface phase identification and structural depth profiling determination of polycrystalline films. Typical examples to illustrate the types of information that can be obtained by the techniques are presented.

MBE Growth and Characterization of CdTe, ZnTe Epilayers and CdTe/ZnCdTe Superlattices on GaAs Substrates

1992 ◽  
Vol 263 ◽  
Author(s):  
A.E. Milokhin ◽  
I.E. Trofimov ◽  
M.V. Petrov ◽  
F.F. Balakirev ◽  
V.D. Kuzmin ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Buffer Layer ◽  
Lattice Constant ◽  
Strong Influence ◽  
High Crystalline Quality ◽  
Mbe Growth ◽  
X Ray ◽  
Gaas Substrates

Semiconductor heterostuctures ZnxCd1−xTe/CdTe were found to be of interest recently due to their potential practical usage. The reason for this is the beautiful variety of electrical heterostucture properties which arise from the strong influence of elastic deformation distribution. Thin epilayer films and superlattices ZnxCd1−xTe/CdTe were prepared on GaAs semi-isolator substrates by MBE technology with RHEED oscillation measurements of the deposited layers. X-ray measurements have shown high crystalline quality of the samples.We have performed Raman scattering studies of ZnxZnxCd1−xTe/CdTe structures. The data obtained were interpreted as a proff of the pseudomorphous growth model. That is, ZnxCd1−xTe/CdTe SLS keeps the lattice constant of the buffer layer.

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