Hydroxyl-Radical-Assisted Growth of ZnO Films by Remote Plasma Metal-Organic Chemical Vapor Deposition

2004 ◽  
Vol 43 (11A) ◽  
pp. 7672-7676 ◽  
Author(s):  
Atsushi Nakamura ◽  
Satoshi Shigemori ◽  
Yoshimi Shimizu ◽  
Toru Aoki ◽  
Jiro Temmyo
1999 ◽  
Vol 567 ◽  
Author(s):  
D. Wolfe ◽  
K. Flock ◽  
R. Therrien ◽  
R. Johnson ◽  
B. Rayner ◽  
...  

ABSTRACTA remote plasma enhanced-metal organic chemical vapor deposition (RPE-MOCVD) process was developed for the preparation of non-crystalline (ZrO2)x-(SiO2)1−x (x ≤ 0.5) alloys, targeting the compound composition ZrSiO4with k ∼ 12.5. Shifts in Si LVV and Zr LMM AES energies with respect to elemental values showed that the deposited film was a fully-oxidized zirconium/silicon alloy. FTIR results were consistent with AES, and a Zr-O-Si bonding mode was identified in the spectra. The films were amorphous before and after RTA at 900°C for 30 sec, as monitored via RHEED. Optical absorption measurements indicated the onset of band-to-band transitions at an energy of approximately 6 eV. Finally, C-V testing showed that the films were insulating.


2006 ◽  
Vol 514 (1-2) ◽  
pp. 306-309 ◽  
Author(s):  
Junjie Zhu ◽  
Ran Yao ◽  
Cihui Liu ◽  
In-Hwan Lee ◽  
Lala Zhu ◽  
...  

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