Preparation of Carbazole Polymer Thin Films Chemically Bound to Substrate Surface by Physical Vapor Deposition Combined with Self-Assembled Monolayer

2005 ◽  
Vol 44 (1B) ◽  
pp. 504-508 ◽  
Author(s):  
Kiyoi Katsuki ◽  
Hiroshi Bekku ◽  
Akira Kawakami ◽  
Jason Locklin ◽  
Derek Patton ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Substrate Surface ◽  
Polymer Thin Films ◽  
Self Assembled Monolayer ◽  
Self Assembled

Synthesis of TPD-Containing Polymer Thin Films by Physical Vapor Deposition

2001 ◽  
Vol 710 ◽  
Author(s):  
Hiroaki Usui ◽  
Terufumi Yoshioka ◽  
Takahiro Katayama ◽  
Kuniaki Tanaka ◽  
Hisaya Sato
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Physical Vapor Deposition ◽  
Substrate Surface ◽  
Polymer Thin Films ◽  
Polymerization Reaction ◽  
Ir Absorption ◽  
Acrylate Monomer ◽  
Organic Optoelectronic Devices ◽  
Organic Optoelectronic

ABSTRACTPolymer thin films having tetraphenyl diaminobiphenyl (TPD) side chain were prepared by evaporating its acrylate monomer by the ionization-assisted deposition (IAD) method. IR absorption and GPC analyses showed that the electron irradiation to the evaporated material works efficiently to initiate the polymerization reaction on the substrate surface, while the simple evaporation produced films mainly consisting of the monomers. The reaction was enhanced by increasing the substrate temperature. However, the surface roughness increased with increasing substrate temperature. Post annealing can be an alternative method to enhance the polymer yield. Light emitting diodes were prepared by stacking the TPD polymer layer, Alq3 emissive layer, and Al electrode on ITO-coated glass. The IAD polymerization can be a useful method for preparing polymer thin films for organic optoelectronic devices.

In situ lateral patterning of thin films of various materials deposited by physical vapor deposition

2004 ◽  
Vol 19 (2) ◽  
pp. 595-599 ◽  
Author(s):  
Chi Zhang ◽  
Ramki Kalyanaraman
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Laser Interference ◽  
Interference Fringes ◽  
Long Range Ordering

An approach to pattern directly thin films of various materials deposited by different physical vapor deposition methods is presented. Co and Ag films deposited by pulsed laser deposition and e-beam evaporation, respectively, were fabricated into 650- and 1000-nm-spaced parallel stripes on Si(100) surfaces by simultaneous two-beam ultraviolet laser interference irradiation of the substrate surface during deposition. The resulting morphology consists of 1- to 2-nm-height stripes, which have the same direction and spacing as the interference fringes. This approach has the potential to allow long-range ordering of well-defined patterns over large areas because the spacing and geometrical patterns are defined by the laser interference. Furthermore, the fact that this method works for different materials and does not require any lithography masks, etching steps, or substrate prepatterning, makes it promising as a simple and economical lateral patterning approach.

{10} edge dislocations in YSZ films grown on (100)MgO by PLD

1994 ◽  
Vol 52 ◽  
pp. 530-531
Author(s):  
Jason R. Heffelfinger ◽  
C. Barry Carter
Keyword(s):  
Thin Films ◽  
Semiconductor Lasers ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Laser System ◽  
Average Energy ◽  
Target Material ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Organic Chemical

Yttria-stabilized zirconia (YSZ) is currently used in a variety of applications including oxygen sensors, fuel cells, coatings for semiconductor lasers, and buffer layers for high-temperature superconducting films. Thin films of YSZ have been grown by metal-organic chemical vapor deposition, electrochemical vapor deposition, pulse-laser deposition (PLD), electron-beam evaporation, and sputtering. In this investigation, PLD was used to grow thin films of YSZ on (100) MgO substrates. This system proves to be an interesting example of relationships between interfaces and extrinsic dislocations in thin films of YSZ.In this experiment, a freshly cleaved (100) MgO substrate surface was prepared for deposition by cleaving a lmm-thick slice from a single-crystal MgO cube. The YSZ target material which contained 10mol% yttria was prepared from powders and sintered to 85% of theoretical density. The laser system used for the depositions was a Lambda Physik 210i excimer laser operating with KrF (λ=248nm, 1Hz repetition rate, average energy per pulse of 100mJ).

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