Synthesis of TPD-Containing Polymer Thin Films by Physical Vapor Deposition

2001 ◽  
Vol 710 ◽  
Author(s):  
Hiroaki Usui ◽  
Terufumi Yoshioka ◽  
Takahiro Katayama ◽  
Kuniaki Tanaka ◽  
Hisaya Sato

ABSTRACTPolymer thin films having tetraphenyl diaminobiphenyl (TPD) side chain were prepared by evaporating its acrylate monomer by the ionization-assisted deposition (IAD) method. IR absorption and GPC analyses showed that the electron irradiation to the evaporated material works efficiently to initiate the polymerization reaction on the substrate surface, while the simple evaporation produced films mainly consisting of the monomers. The reaction was enhanced by increasing the substrate temperature. However, the surface roughness increased with increasing substrate temperature. Post annealing can be an alternative method to enhance the polymer yield. Light emitting diodes were prepared by stacking the TPD polymer layer, Alq3 emissive layer, and Al electrode on ITO-coated glass. The IAD polymerization can be a useful method for preparing polymer thin films for organic optoelectronic devices.

2005 ◽  
Vol 44 (1B) ◽  
pp. 504-508 ◽  
Author(s):  
Kiyoi Katsuki ◽  
Hiroshi Bekku ◽  
Akira Kawakami ◽  
Jason Locklin ◽  
Derek Patton ◽  
...  

1992 ◽  
Vol 06 (08) ◽  
pp. 477-483 ◽  
Author(s):  
QINGXIN SU ◽  
SHIFA XU ◽  
DAFU CUI ◽  
HUIBIN LU ◽  
YONGJUN TIAN ◽  
...  

High-T c superconducting thin films of YBa 2 Cu 3 O 7 were grown in-situ on (100) SrTiO 3 substrates by Nedymium:yttrium aluminum garnet [Nd:YAG] laser ablation. The effects of the substrate temperature on the transition temperature, microcrystalline structure and surface morphology of the films were discussed. Best results were obtained in the 730°–770°C range. X-ray diffraction analysis showed that these films were highly c-oriented with the c-axis perpendicular to the substrate surface. At the optimum substrate temperature, a very smooth morphology with only a few small particles were observed by scanning electron microscopy. The zero resistance temperature of these films were ≥ 90 K with a narrow transition width and the ac susceptibility measurement also gave the same result. The highest critical current density obtained at 77 K and zero magnetic field was 3.8 × 106 A/cm 2.


Author(s):  
G. Shimaoka ◽  
S. C. Chang

Recent studies of evaporated germanium films have demonstrated that their structure and epitaxy are greatly influenced by various evaporation parameters such as vacuum pressure, substrate surface conditions, and deposition rate as veil as substrate temperature. The purpose of this study is to investigate growth and structure of germanium thin films evaporated onto a clean rock-salt substrate in ultrahlgh vacuum and to find optimum epitaxial growth condition.High-purity (intrinsic) germanium was evaporated at various deposition rates, 0.1-5Å/sec, and thicknesses, 3O-5OOÅ, onto vacuum-cleaved and air-cleaved (001)NaCl substrates held at 25°-500°C in a vacuum of ∼10-8Torr. Some films were prepared under lateral electric field of dc 100V/cm or an electron-beam irradiation with ∼1015 electrons/cm2/sec, 300-400V, applied to the substrate during evaporation.


Vacuum ◽  
2009 ◽  
Vol 84 (5) ◽  
pp. 607-611 ◽  
Author(s):  
Akihiro Uemura ◽  
Kazuya Kezuka ◽  
Satoru Iwamori ◽  
Itsuo Nishiyama

1999 ◽  
Vol 602 ◽  
Author(s):  
H. Heo ◽  
S.J. Lim ◽  
G.Y. Sung ◽  
N.-H. Cho

AbstractLa1−x SrxMnO3(0.19≤x≤0.31) thin films were prepared on silicon wafers by sputter techniques. The effect of substrate temperature, chemical composition and post-deposition heat-treatment on the crystalline structure and electrical characteristics of the films was investigated. The films grown at a substrate temperature of 500°C were found to be of the pseudo-tetragonal system (0.97≤a/c≤1) and exhibited a strong tendency of {001} planes to lie parallel to substrate surface. With the increase of x, the electrical resistivity of the films decreased and the transition temperature between the metallic and semiconducting electrical transport behaviors shifted to high temperature. With a magnetic field of 0.18 Tesla, the maximum magneto-resistance ratio (MR%) of La0.69Sr0.31MnO3 polycrystalline thin films was about 390%.


2002 ◽  
Vol 734 ◽  
Author(s):  
Hiroaki Usui ◽  
Atsuhiro Katayama ◽  
Takanobu Honda ◽  
Kuniaki Tanaka

ABSTRACTAlkylacrylate compounds were deposited by the ionization-assisted deposition (IAD) method to form thin films of comb-like polymers having long alkyl side chains on the vinyl polymer backbone. From the source material of n-octadecyl acrylate, polymer thin films having average molecular weight of 6000 were obtained at the polymer yield of 45 to 65%. For the preparation of fluorinated polymer thin films, 1H, 1H, 11H-eicosafluoroundecyl acrylate was used as the source material. Although the conventional evaporation method could not accumulate any films with this material, the IAD was able to produce insoluble thin films that have large contact angle against water droplet. In either material, the polymerization reaction was enhanced with increasing electron emission current for IAD. These results indicate that the IAD enables the preparation of thin polymer coatings that have polyethylene or Teflon-like properties without using the solvents.


2016 ◽  
Vol 49 (2) ◽  
pp. 574-580 ◽  
Author(s):  
Cameron K. Shelton ◽  
Thomas H. Epps

1989 ◽  
Vol 158 ◽  
Author(s):  
N. Biunno ◽  
J. Krishnaswamy ◽  
S. Sharan ◽  
L. Ganapathi ◽  
J. Narayan

ABSTRACTWe have investigated the formation of various multilayer thin films by the laser physical vapor deposition technique. A multi stage target holder was constructed to perform all process steps in-situ; target/substrate cleaning, deposition, and annealing. The laser physical vapor deposition technique offers many advantages over conventional physical vapor techniques, such as, lower substrate temperature, microstructural control, and very low contamination levels. Film thickness can be controlled from near atomic to micron dimensions. A layer-by-layer (two dimensional) growth can be achieved, resulting in nonequilibrium structures. The films were analyzed using cross-section and high resolution transmission electron microscopy (TEM). The significant reduction in substrate temperature for the formation of high quality multilayer and epitaxial films opens up many new areas of applications requiring reduced thermal-budget processing.


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