Characteristics of Band-to-Band Tunneling Hot Hole Injection for Erasing Operation in Charge-Trapping Memory

2006 ◽  
Vol 45 (4B) ◽  
pp. 3179-3184
Author(s):  
Lei Sun ◽  
Liyang Pan ◽  
Huiqing Pang ◽  
Ying Zeng ◽  
Zhaojian Zhang ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Hole Injection ◽  
Band To Band Tunneling ◽  
Charge Trapping Memory

Characteristics of Band-to-Band Hot Hole Injection for Erasing Operation in Charge Trapping Memory

2005 ◽  
Author(s):  
Lei Sun ◽  
Liyang Pan ◽  
Huiqing Pang ◽  
Ying Zeng ◽  
Zhaojian Zhang ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Hole Injection ◽  
Charge Trapping Memory

Lucky-hole injection induced by band-to-band tunneling leakage in stacked gate transistors

2002 ◽  
Author(s):  
K. Yoshikawa ◽  
S. Mori ◽  
E. Sakagami ◽  
Y. Ohshima ◽  
Y. Kaneko ◽  
...  
Keyword(s):  
Hole Injection ◽  
Band To Band Tunneling

Nanographene charge trapping memory with a large memory window

2015 ◽  
Vol 26 (45) ◽  
pp. 455704 ◽  
Author(s):  
Jianling Meng ◽  
Rong Yang ◽  
Jing Zhao ◽  
Congli He ◽  
Guole Wang ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Memory Window ◽  
Large Memory ◽  
Charge Trapping Memory

Total ionizing dose effects on graphene-based charge-trapping memory

2019 ◽  
Vol 62 (12) ◽  
Author(s):  
Kai Xi ◽  
Jinshun Bi ◽  
Sandip Majumdar ◽  
Bo Li ◽  
Jing Liu ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Total Ionizing Dose ◽  
Dose Effects ◽  
Charge Trapping Memory ◽  
Total Ionizing Dose Effects
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