scholarly journals NANOPARTICLE BASED CHARGE TRAPPING MEMORY DEVICE APPLYING MOS TECHNOLOGY: A COGNITIVE APPROACH USING POLYVINYL ALCOHOL CAPPED ZINC OXIDE NANOCRYSTAL

2013 ◽  
Vol 02 (01) ◽  
pp. 39-42 ◽  
Author(s):  
Alok Ranjan .
Keyword(s):  
Zinc Oxide ◽  
Polyvinyl Alcohol ◽  
Charge Trapping ◽  
Memory Device ◽  
Cognitive Approach ◽  
Charge Trapping Memory

scholarly journals Low power zinc-oxide based charge trapping memory with embedded silicon nanoparticles via poole-frenkel hole emission

2014 ◽  
Vol 104 (1) ◽  
pp. 013112 ◽  
Author(s):  
Nazek El-Atab ◽  
Ayse Ozcan ◽  
Sabri Alkis ◽  
Ali K. Okyay ◽  
Ammar Nayfeh
Keyword(s):  
Zinc Oxide ◽  
Low Power ◽  
Silicon Nanoparticles ◽  
Charge Trapping ◽  
Charge Trapping Memory

Improving Zr0.5Hf0.5O2-based charge-trapped performance by graphene oxide quantum dots

2019 ◽  
Vol 12 (01) ◽  
pp. 1850093 ◽  
Author(s):  
Hong Wang ◽  
Bangfu Ding ◽  
Xiaoyan Tian ◽  
Rui Zhao ◽  
Yuanyuan Zhang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Graphene Oxide ◽  
Charge Trapping ◽  
Memory Device ◽  
Wide Bandgap ◽  
Photoelectron Spectra ◽  
Promising Candidate ◽  
New Type ◽  
Charge Trapping Memory ◽  
Graphene Oxide Quantum Dots

In this work, graphene oxide quantum dots (GOQDs) are introduced as an electron-trapped layer in Pd/Zr[Formula: see text]Hf[Formula: see text]O2 (ZHO)/SiO2/Si memory device. This structure possessed longer than 104 s retention capability, a low operation voltage around [Formula: see text][Formula: see text]V and 2.61[Formula: see text]V storage windows. GOQDs contained carbon–carbon and carbon–oxygen single/double bonds based on the analysis of C-1[Formula: see text] and O-1[Formula: see text] X-ray photoelectron spectra. It is proposed that the GOQDs’ wide bandgap with many oxygen-containing functional groups favors charge capture to a greater extent. This new type of charge-trapping memory can be a promising candidate for wide application to storing information with non-volatility in the big data era.

Electrical characteristics of gallium–indium–zinc oxide thin-film transistor non-volatile memory with Sm2O3 and SmTiO3 charge trapping layers

RSC Advances ◽  
2015 ◽  
Vol 5 (12) ◽  
pp. 8566-8570 ◽  
Author(s):  
Jim-Long Her ◽  
Fa-Hsyang Chen ◽  
Ching-Hung Chen ◽  
Tung-Ming Pan
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Charge Trapping ◽  
Memory Device ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Electrical Characteristics ◽  
Non Volatile Memory ◽  
Volatile Memory

In this study, we report the structural and electrical characteristics of high-κ Sm2O3 and SmTiO3 charge trapping layers on an indium–gallium–zinc oxide (IGZO) thin-film transistor (TFT) for non-volatile memory device applications.

A New Scalable Self-Aligned Dual-Bit Split-Gate Charge-Trapping Memory Device

2005 ◽  
Vol 52 (10) ◽  
pp. 2250-2257 ◽  
Author(s):  
L. Breuil ◽  
L. Haspeslagh ◽  
P. Blomme ◽  
D. Wellekens ◽  
J. DeVos ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Memory Device ◽  
Charge Trapping Memory ◽  
Gate Charge

Novel multi-bit non-uniform channel charge trapping memory device with virtual-source NAND flash array

2010 ◽  
Vol 31 (10) ◽  
pp. 104009
Author(s):  
Gu Haiming ◽  
Pan Liyang ◽  
Zhu Peng ◽  
Wu Dong ◽  
Zhang Zhigang ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Memory Device ◽  
Nand Flash ◽  
Virtual Source ◽  
Uniform Channel ◽  
Charge Trapping Memory

scholarly journals Zinc-oxide charge trapping memory cell with ultra-thin chromium-oxide trapping layer

AIP Advances ◽  
2013 ◽  
Vol 3 (11) ◽  
pp. 112116 ◽  
Author(s):  
Nazek El-Atab ◽  
Ayman Rizk ◽  
Ali K. Okyay ◽  
Ammar Nayfeh
Keyword(s):  
Zinc Oxide ◽  
Chromium Oxide ◽  
Charge Trapping ◽  
Memory Cell ◽  
Oxide Charge ◽  
Thin Chromium ◽  
Charge Trapping Memory
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