Finding Growth Regions for Carbon Nanofibers and Tubes under Different Growth Conditions Using Simplified Hot-Filament Chemical Vapor Deposition

2006 ◽  
Vol 45 (8A) ◽  
pp. 6517-6523 ◽  
Author(s):  
Naoki Koizumi ◽  
Yusuke Minorikawa ◽  
Hiroyuki Yakabe ◽  
Hideki Kimura ◽  
Tateki Kurosu ◽  
...  
1998 ◽  
Vol 13 (7) ◽  
pp. 1738-1740 ◽  
Author(s):  
H. K. Woo ◽  
C. S. Lee ◽  
I. Bello ◽  
S. T. Lee

Epitaxial β–SiC film has been grown on a mirror-polished Si(111) substrate using bias-assisted hot filament chemical vapor deposition (BA-HFCVD) at a substrate temperature of 1000 °C. A graphite plate was used as the only carbon source, and hydrogen was the only feeding gas to the deposition system. Atomic hydrogen, produced by hot filaments, reacted with the graphite to form hydrocarbon radicals which further reacted with the silicon substrate and deposited as β–SiC. The effect of negatively biasing the substrate is the key factor for epitaxial growth. Under the same growth conditions without negative bias, polycrystalline β–SiC resulted.


Vacuum ◽  
2008 ◽  
Vol 83 (2) ◽  
pp. 273-275
Author(s):  
H.J. Ceragioli ◽  
A.C. Peterlevitz ◽  
J.C.R. Quispe ◽  
V. Baranauskas

2003 ◽  
Vol 82 (15) ◽  
pp. 2515-2517 ◽  
Author(s):  
Chia-Fu Chen ◽  
Chien-Liang Lin ◽  
Chi-Ming Wang

2015 ◽  
Vol 48 (6) ◽  
pp. 104-109
Author(s):  
Youn-Joon Baik ◽  
Do-Hyun Kwon ◽  
Jong-Keuk Park ◽  
Wook-Seong Lee

Materials ◽  
2021 ◽  
Vol 14 (2) ◽  
pp. 426
Author(s):  
Byeong-Kwan Song ◽  
Hwan-Young Kim ◽  
Kun-Su Kim ◽  
Jeong-Woo Yang ◽  
Nong-Moon Hwang

Although the growth rate of diamond increased with increasing methane concentration at the filament temperature of 2100 °C during a hot filament chemical vapor deposition (HFCVD), it decreased with increasing methane concentration from 1% CH4 –99% H2 to 3% CH4 –97% H2 at 1900 °C. We investigated this unusual dependence of the growth rate on the methane concentration, which might give insight into the growth mechanism of a diamond. One possibility would be that the high methane concentration increases the non-diamond phase, which is then etched faster by atomic hydrogen, resulting in a decrease in the growth rate with increasing methane concentration. At 3% CH4 –97% H2, the graphite was coated on the hot filament both at 1900 °C and 2100 °C. The graphite coating on the filament decreased the number of electrons emitted from the hot filament. The electron emission at 3% CH4 –97% H2 was 13 times less than that at 1% CH4 –99% H2 at the filament temperature of 1900 °C. The lower number of electrons at 3% CH4 –97% H2 was attributed to the formation of the non-diamond phase, which etched faster than diamond, resulting in a lower growth rate.


2021 ◽  
Vol 6 (20) ◽  
pp. 4867-4873
Author(s):  
Bhagyashri Todankar ◽  
Pradeep Desai ◽  
Ajinkya K. Ranade ◽  
Tharangattu N. Narayanan ◽  
Masaki Tanemura ◽  
...  

2003 ◽  
Vol 372 (3-4) ◽  
pp. 320-324 ◽  
Author(s):  
Y.H Tang ◽  
X.T Zhou ◽  
Y.F Hu ◽  
C.S Lee ◽  
S.T Lee ◽  
...  

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