An Empirical Potential Approach to Wurtzite-Zinc-Blende Polytypism in Group III-V Semiconductor Nanowires

2006 ◽  
Vol 45 (No. 9) ◽  
pp. L275-L278 ◽  
Author(s):  
Toru Akiyama ◽  
Kosuke Sano ◽  
Kohji Nakamura ◽  
Tomonori Ito
Keyword(s):  
Semiconductor Nanowires ◽  
Potential Approach ◽  
Group Iii ◽  
Empirical Potential ◽  
Zinc Blende ◽  
Group Iii V Semiconductor

Theoretical investigations on the formation of wurtzite segments in group III–V semiconductor nanowires

2008 ◽  
Vol 254 (23) ◽  
pp. 7668-7671 ◽  
Author(s):  
Tomoki Yamashita ◽  
Kosuke Sano ◽  
Toru Akiyama ◽  
Kohji Nakamura ◽  
Tomonori Ito
Keyword(s):  
Semiconductor Nanowires ◽  
Group Iii ◽  
Theoretical Investigations ◽  
Group Iii V Semiconductor

scholarly journals Magnetoconductance correction in zinc-blende semiconductor nanowires with spin-orbit coupling

2017 ◽  
Vol 96 (23) ◽  
Author(s):  
Michael Kammermeier ◽  
Paul Wenk ◽  
John Schliemann ◽  
Sebastian Heedt ◽  
Thomas Gerster ◽  
...  
Keyword(s):  
Semiconductor Nanowires ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Zinc Blende

An empirical potential approach to dislocation formation and structural stability in GaNxAs1−x

2005 ◽  
Vol 244 (1-4) ◽  
pp. 182-185 ◽  
Author(s):  
Keiichi Kawamoto ◽  
Takashi Suda ◽  
Toru Akiyama ◽  
Kohji Nakamura ◽  
Tomonori Ito
Keyword(s):  
Structural Stability ◽  
Potential Approach ◽  
Empirical Potential ◽  
Dislocation Formation

Electron Scattering in Buried InGaAs MOSFET Channel with HfO2 Gate Oxide

2009 ◽  
Vol 1155 ◽  
Author(s):  
Serge Oktyabrsky ◽  
Padmaja Nagaiah ◽  
Vadim Tokranov ◽  
Sergei Koveshnikov ◽  
Michael Yakimov ◽  
...  
Keyword(s):  
High Mobility ◽  
Gate Oxide ◽  
Cmos Technology ◽  
Interface Layer ◽  
Oxide Interface ◽  
Channel Mobility ◽  
Group Iii ◽  
High K ◽  
Electron Transport Properties ◽  
Group Iii V Semiconductor

AbstractGroup III-V semiconductor materials are being studied as potential replacements for conventional CMOS technology due to their better electron transport properties. However, the excess scattering of carriers in MOSFET channel due to high-k gate oxide interface significantly depreciates the benefits of III-V high-mobility channel materials. We present results on Hall electron mobility of buried QW structures influenced by remote scattering due to InGaAs/HfO2 interface. Mobility in In0.77Ga0.23As QWs degraded from 12000 to 1200 cm2/V-s and the mobility vs. temperature slope changed from T-1.2 to almost T+1.0 in 77-300 K range when the barrier thickness is reduced from 50 to 0 nm. This mobility change is attributed to remote Coulomb scattering due to charges and dipoles at semiconductor/oxide interface. Elimination of the InGaAs/HfO2 interface via introduction of SiOx interface layer formed by oxidation of thin a-Si passivation layer was found to improve the channel mobility. The mobility vs. sheet carrier density shows the maximum close to 2×1012 cm-2.

An empirical potential approach to structural stability of GaNxAs1−x

2003 ◽  
Vol 258 (3-4) ◽  
pp. 277-282 ◽  
Author(s):  
Takashi Suda ◽  
Yoshihiro Kangawa ◽  
Kohji Nakamura ◽  
Tomonori Ito
Keyword(s):  
Structural Stability ◽  
Potential Approach ◽  
Empirical Potential

scholarly journals Synthesis and characterization of group III-V semiconductor clusters: gallium phosphide GaP in zeolite Y

1989 ◽  
Vol 111 (20) ◽  
pp. 8006-8007 ◽  
Author(s):  
J. E. Mac Dougall ◽  
H. Eckert ◽  
G. D. Stucky ◽  
N. Herron ◽  
Y. Wang ◽  
...  
Keyword(s):  
Gallium Phosphide ◽  
Zeolite Y ◽  
Synthesis And Characterization ◽  
Group Iii ◽  
Semiconductor Clusters ◽  
Group Iii V Semiconductor
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