scholarly journals Group III–V Semiconductor High Electron Mobility Transistor on Si Substrate

2017 ◽  
Author(s):  
Ravindiran Munusami ◽  
Shankar Prabhakar
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Si Substrate ◽  
High Electron Mobility ◽  
Group Iii ◽  
Group Iii V Semiconductor

AlGaAs/InGaAs High Electron Mobility Transistor Grown on Si Substrate with Ge/GexSi1-xMetamorphic Buffer Layers

2008 ◽  
Vol 47 (9) ◽  
pp. 7069-7072 ◽  
Author(s):  
Edward Yi Chang ◽  
Jui-Chien Huang ◽  
Yueh-Chin Lin ◽  
Yen-Chang Hsieh ◽  
Chia-Yuan Chang
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Buffer Layers ◽  
High Electron ◽  
Si Substrate ◽  
High Electron Mobility

Influence of the Al content of the AlGaN buffer layer in AlGaN/GaN high-electron-mobility transistor structures on a Si substrate

2017 ◽  
Vol 214 (3) ◽  
pp. 1600618 ◽  
Author(s):  
Yuya Yamaoka ◽  
Ken Kakamu ◽  
Akinori Ubukata ◽  
Yoshiki Yano ◽  
Toshiya Tabuchi ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Si Substrate ◽  
High Electron Mobility ◽  
Al Content ◽  
Algan Buffer

The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

2019 ◽  
Vol 217 (7) ◽  
pp. 1900694
Author(s):  
Uiho Choi ◽  
Donghyeop Jung ◽  
Kyeongjae Lee ◽  
Taemyung Kwak ◽  
Taehoon Jang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
Aln Buffer
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