Recovery characteristics of threshold voltage degradation for hydrogenated amorphous silicon thin-film transistors under DC bias stresses

2016 ◽  
Author(s):  
Han-Wen Liu ◽  
Chien-Hung Lin ◽  
Fang-Hsing Wang
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Thin Film ◽  
Dc Bias ◽  
Voltage Degradation ◽  
Hydrogenated Amorphous ◽  
Threshold Voltage Degradation

Proximity Recovery Layers to Speed up the Recovery of Stressed Amorphous Silicon Thin-Film Transistors

1990 ◽  
Vol 192 ◽  
Author(s):  
M. Hack ◽  
W. B. Jackson ◽  
R. Lujan
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
High Voltage ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Thin Film ◽  
Threshold Voltage Shift ◽  
Speed Up ◽  
Hydrogenated Amorphous

ABSTRACTWe have developed a means to speed up the recovery of both the threshold voltage shift of hydrogenated amorphous silicon (a-Si:H) transistors and the Vx shift of high voltage a-Si devices. This is accomplished by placing a lightly doped compensated layer adjacent to the active layer in these transistors. This proximity recovery layer does not alter the initial characteristics of a-Si:H transistors and is completely process compatible with standard fabrication procedures.

Performance of thin hydrogenated amorphous silicon thin‐film transistors

1991 ◽  
Vol 69 (4) ◽  
pp. 2339-2345 ◽  
Author(s):  
J. Kanicki ◽  
F. R. Libsch ◽  
J. Griffith ◽  
R. Polastre
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Thin Film ◽  
Hydrogenated Amorphous
Sign in / Sign up

Export Citation Format

Share Document