Preparation of Hydrogenated Amorphous Silicon Carbon Nitride Films by Hot-Wire Chemical Vapor Deposition Using Hexamethyldisilazane for Silicon Solar Cell Applications

2007 ◽  
Vol 46 (1) ◽  
pp. 56-59 ◽  
Author(s):  
Amornrat Limmanee ◽  
Michio Otsubo ◽  
Takehiko Sato ◽  
Shinsuke Miyajima ◽  
Akira Yamada ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Solar Cell ◽  
Vapor Deposition ◽  
Carbon Nitride ◽  
Silicon Solar Cell ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Silicon Carbon ◽  
Hydrogenated Amorphous

Hydrogenated Amorphous Silicon Germanium Alloys Grown by the Hot-Wire Chemical Vapor Deposition Technique

1998 ◽  
Vol 507 ◽  
Author(s):  
Brent P. Nelson ◽  
Yueqin Xu ◽  
D.L. Williamson ◽  
Bolko Von Roedern ◽  
Alice Mason ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Germanium ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Germanium Content ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous ◽  
Gas Ratio

ABSTRACTWe successfully grow high-quality hydrogenated amorphous-silicon-germanium alloys (a-SiGe:H) by the hot-wire chemical-vapor deposition (HWCVD) technique using silane and germane gas mixtures. These alloys display electronic properties as good as those grown by the plasma-enhanced chemical-vapor deposition (PECVD) technique, when comparing materials with the same optical bandgaps. However, we grow materials with good electrical properties at high deposition rates—up to 40 Å/s, compared to 1–4 Å/s for PECVD materials. Our alloys exhibit similar trends with increasing Ge content to alloys grown by PECVD. The defect density, the dark conductivity, and the degree of nanostructural heterogeneity (as measured by small-angle X-ray scattering) all increase with increasing germanium content in the alloy. The nanostructural heterogeneity displays a sharp transition between 9 at.% and 14 at.% germanium. PECVD- grown a-SiGe:H alloys exhibit a similar transition at 20 at.% Ge. The photoconductivity and the ambipolar diffusion length of the alloys decrease with increasing germanium content. For a fixed silane-to-germane gas ratio, all material properties improve substantially when increasing substrate temperature (Tsub) from 220°C to 375°C. Increasing Tsub also narrows the optical bandgap and lowers the hydrogen content in the alloys for the same germane-to-silane gas ratio.

Light-Induced Increase in Two-Level Tunneling States in Hydrogenated Amorphous Silicon

1999 ◽  
Vol 557 ◽  
Author(s):  
Xiao Liu ◽  
R.O. Pohl ◽  
R.S. Crandall
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Internal Friction ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Hydrogenated Amorphous

AbstractWe observe an increase of the low-temperature internal friction of hydrogenated amorphous silicon prepared by both hot-wire and plasma-enhanced chemical-vapor deposition after extended light-soaking at room temperature. This increase, and the associated change in sound velocity, can be explained by an increase of the density of two-level tunneling states, which serves as a measure of the lattice disorder. The amount of increase in internal friction is remarkably similar in both types of films although the amount and the microstructure of hydrogen are very different. Experiments conducted on a sample prepared by hot-wire chemical-vapor deposition show that this change anneals out gradually at room temperature in about 70 days. Possible relation of the light-induced changes in the low-temperature elastic properties to the Staebler-Wronski effect is discussed.

scholarly journals Hot-wire chemical vapor deposition low-loss hydrogenated amorphous silicon waveguides for silicon photonic devices

2019 ◽  
Vol 7 (2) ◽  
pp. 193 ◽  
Author(s):  
Swe Z. Oo ◽  
Antulio Tarazona ◽  
Ali Z. Khokhar ◽  
Rafidah Petra ◽  
Yohann Franz ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Photonic Devices ◽  
Hot Wire ◽  
Low Loss ◽  
Silicon Waveguides ◽  
Silicon Photonic ◽  
Hydrogenated Amorphous

Saturated defect densities of hydrogenated amorphous silicon grown by hot-wire chemical vapor deposition at rates up to 150 Å/s

2001 ◽  
Vol 78 (24) ◽  
pp. 3788-3790 ◽  
Author(s):  
A. H. Mahan ◽  
Y. Xu ◽  
B. P. Nelson ◽  
R. S. Crandall ◽  
J. D. Cohen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Hydrogenated Amorphous ◽  
Defect Densities

Formation of Highly Transparent SiCN Films Prepared by HWCVD

2008 ◽  
Vol 54 ◽  
pp. 223-226
Author(s):  
Akira Izumi ◽  
T. Nakayamada
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Carbon Nitride ◽  
Visible Region ◽  
Chemical Vapor ◽  
Ultraviolet Region ◽  
Hot Wire ◽  
Silicon Carbon ◽  
Source Materials

Highly transparent silicon carbon nitride (SiCN) films were prepared by hot wire chemical vapor deposition (HWCVD) at low temperature as low as 40oC. Hexamethyldisilazane (HMDS) and NH3 were used as the source materials for SiCN deposition. The SiCN film prepared by only HMDS was completely transparent in the wavelength of the visible region. Moreover, there was a little absorption in the ultraviolet region. However, SiCN prepared by using HMDS and NH3 showed almost transparent both visible and UV regions.

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