An Efficient Quantum-Based Model for the Threshold Voltage of Thin Film Double Gate/Silicon on Insulator Silicon Metal Oxide Semiconductor Field Effect Transistors

Saeed Mohammadi; Ali Afzali-Kusha

doi:10.1143/jjap.49.024304

An Efficient Quantum-Based Model for the Threshold Voltage of Thin Film Double Gate/Silicon on Insulator Silicon Metal Oxide Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.024304 ◽

2010 ◽

Vol 49 (2) ◽

pp. 024304 ◽

Cited By ~ 1

Author(s):

Saeed Mohammadi ◽

Ali Afzali-Kusha

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate

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Analytical Models for Symmetric Thin-Film Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor-Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.4916 ◽

1993 ◽

Vol 32 (Part 1, No. 11A) ◽

pp. 4916-4922 ◽

Cited By ~ 14

Author(s):

Kunihiro Suzuki ◽

Shigeo Satoh ◽

Tetsu Tanaka ◽

Satoshi Ando

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Analytical Models ◽

Double Gate

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Consideration of Performance Limitation of Sub-100-nm Double-Gate Silicon-on-Insulator (SOI) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.l1096 ◽

2002 ◽

Vol 41 (Part 2, No. 10A) ◽

pp. L1096-L1098 ◽

Cited By ~ 2

Author(s):

Shin-ichiro Yanagi ◽

Yasuhisa Omura

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate ◽

Performance Limitation

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Empirical Quantitative Modeling of Threshold Voltage of Sub-50-nm Double-Gate Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3074 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3074-3078 ◽

Cited By ~ 8

Author(s):

Yuki Tahara ◽

Yasuhisa Omura

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Quantitative Modeling ◽

Double Gate ◽

Effect Transistor

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Threshold Voltage Dependence of Threshold Voltage Variability in Intrinsic Channel Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors with Ultrathin Buried Oxide

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04dc01 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DC01 ◽

Cited By ~ 7

Author(s):

Chiho Lee ◽

Arifin Tamsir Putra ◽

Ken Shimizu ◽

Toshiro Hiramoto

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Voltage Dependence ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Buried Oxide

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Electrical effects of a single stacking fault on fully depleted thin-film silicon-on-insulator P-channel metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1417995 ◽

2002 ◽

Vol 91 (1) ◽

pp. 420 ◽

Cited By ~ 11

Author(s):

Jianan Yang ◽

Gerold W. Neudeck ◽

John P. Denton

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Stacking Fault ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Thin Film Silicon

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Analytical Threshold Voltage Model for Double-Gate Schottky Source/Drain Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.8311 ◽

2008 ◽

Vol 47 (11) ◽

pp. 8311-8316 ◽

Cited By ~ 4

Author(s):

Ryo Tanabe ◽

Kunihiro Suzuki

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

Threshold Voltage Model

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Mobility Degradation in (110)-Oriented Ultrathin-Body Double-Gate p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with Silicon-on-Insulator Thickness of Less than 5 nm

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.041302 ◽

2010 ◽

Vol 49 (4) ◽

pp. 041302 ◽

Cited By ~ 1

Author(s):

Ken Shimizu ◽

Toshiro Hiramoto

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate ◽

Mobility Degradation ◽

P Type

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Empirical Models of Phonon-Limited Electron Mobility for Ultrathin-Body Single-Gate and Double-Gate Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors with (001) or (111) Si Surface Channel

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.3463 ◽

2007 ◽

Vol 46 (6A) ◽

pp. 3463-3470

Author(s):

Tsuyoshi Yamamura ◽

Shingo Sato ◽

Yasuhisa Omura

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Empirical Models ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate

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Suppression of Geometric Component of Charge Pumping Current in Thin Film Silicon on Insulator Metal-Oxide-Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.l855 ◽

1998 ◽

Vol 37 (Part 2, No. 7B) ◽

pp. L855-L858 ◽

Cited By ~ 8

Author(s):

Tran Ngoc Duyet ◽

Hiroki Ishikuro ◽

Makoto Takamiya ◽

Takuya Saraya ◽

Toshiro Hiramoto

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Charge Pumping ◽

Thin Film Silicon

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Radio-Frequency Small-Signal and Noise Modeling for Silicon-on-Insulator Dynamic Threshold Voltage Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c041 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C041

Author(s):

Sheng-Chun Wang ◽

Pin Su ◽

Kun-Ming Chen ◽

Sheng-Yi Huang ◽

Cheng-Chou Hung ◽

...

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Dynamic Threshold ◽

Small Signal

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