Metal–Organic Chemical Vapor Deposition Growth and Characterization of InAlGaN Multiple Quantum Wells

2009 ◽  
Vol 48 (7) ◽  
pp. 071001 ◽  
Author(s):  
Yusuke Sakai ◽  
Takashi Egawa
2005 ◽  
Vol 901 ◽  
Author(s):  
Shalini Gupta ◽  
Hun Kang ◽  
Matthew Kane ◽  
William E Fenwick ◽  
Nola Li ◽  
...  

AbstractQuantum dots (QDs) have been shown to improve the efficiency and optical properties of opto- electronic devices compared to two dimensional quantum wells in the active region. The formation of self-assembled GaN nanostructures on aluminum nitride (AlN) grown on sapphire substrates by Metal Organic Chemical Vapor deposition (MOCVD) was explored. This paper reports on the effect ofin-situactivation in nitrogen atmosphere on MOCVD grown GaN nanostructures. The effect of introducing manganese in these nanostructures was also studied. Optically active nanostructures were successfully obtained. A blue shift is observed in the photoluminescence data with a decrease in nanostructure size.


RSC Advances ◽  
2015 ◽  
Vol 5 (92) ◽  
pp. 75211-75217 ◽  
Author(s):  
Hailiang Dong ◽  
Jing Sun ◽  
Shufang Ma ◽  
Jian Liang ◽  
Bingshe Xu

InGaAs/GaAsP MQWs grown by metal–organic chemical vapor deposition at different growth temperatures generated an indium diffusion zone (InGaAsP) between InGaAs and GaAsP.


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