Influence of rotation speed of substrate on the growth mechanism of InGaN/GaN multiple quantum wells grown by six-wafer metal organic chemical vapor deposition system
2002 ◽
Vol 235
(1-4)
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pp. 183-187
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2009 ◽
Vol 48
(7)
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pp. 071001
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2008 ◽
Vol 47
(9)
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pp. 7026-7031
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