Gallic Acid as a Complexing Agent for Copper Chemical Mechanical Polishing Slurries at Neutral pH

2011 ◽  
Vol 50 (5) ◽  
pp. 056501 ◽  
Author(s):  
Yung Jun Kim ◽  
Min Cheol Kang ◽  
Oh Joong Kwon ◽  
Jae Jeong Kim
Keyword(s):  
Gallic Acid ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Complexing Agent ◽  
Neutral Ph

Gallic Acid as a Complexing Agent for Copper Chemical Mechanical Polishing Slurries at Neutral pH

2011 ◽  
Vol 50 (5R) ◽  
pp. 056501
Author(s):  
Yung Jun Kim ◽  
Min Cheol Kang ◽  
Oh Joong Kwon ◽  
Jae Jeong Kim
Keyword(s):  
Gallic Acid ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Complexing Agent ◽  
Neutral Ph

Chemical Mechanical Polishing of Cu Pattern Wafer Based Alkaline Slurry in GLSI with R(NH2)n as Complexing Agent

2011 ◽  
Vol 236-238 ◽  
pp. 3020-3023 ◽  
Author(s):  
Yan Gang He ◽  
Xiao Wei Gan ◽  
Wei Hong ◽  
Yi Hu ◽  
Yu Ling Liu
Keyword(s):  
Reaction Mechanism ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Complexing Agents ◽  
Complexing Agent ◽  
Mechanism Analysis ◽  
Slurry Stability ◽  
Cu Cmp ◽  
Better Than

Chemical mechanical polishing (CMP) of Cu pattern wafer based alkaline slurry in GLSI with R(NH2)n as complexing agent was investigated. In Cu CMP procedure, it is necessary to minimize the surface dishing and erosion while maintaining good planarity. This requirements are met through the complexing agents. Based on the reaction mechanism analysis of Cu in alkaline slurry with R(NH2)n as complexing agent in CMP, the performance of Cu dishing and erosion were discussed. The results showed that the slurry stability can be improved obviously by the addition of R(NH2)n as complexing agent, both Cu1 and Cu2 have good dishing and erosion performance. Furthermore, the dishing condition of Cu2 (180-230nm) is better than that of Cu1 (280-370nm), and the erosion condition of Cu2 (230-260nm) is also better than that of Cu1 (450-500nm).

scholarly journals Exploring the role of −NH2 functional groups of ethylenediamine in chemical mechanical polishing of GCr15 bearing steel

Friction ◽  
2020 ◽  
Author(s):  
Hanqiang Wu ◽  
Liang Jiang ◽  
Xia Zhong ◽  
Jinwei Liu ◽  
Na Qin ◽  
...  
Keyword(s):  
Functional Groups ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Bearing Steel ◽  
Mechanical Polishing ◽  
Complexing Agents ◽  
Complexing Agent ◽  
Acidic Ph ◽  
Gcr15 Steel ◽  
Gcr15 Bearing Steel

AbstractEthylenediamine with two −NH2 functional groups was used as a critical complexing agent in chemical mechanical polishing (CMP) slurries for a high carbon chromium GCr15 bearing steel (equivalent to AISI 52100). The polishing performance and corresponding mechanism of −NH2 functional groups were thoroughly investigated as a function of pH. It is revealed that, when polished with ethylenediamine and H2O2-based slurries, the material removal rate (MRR) and surface roughness Ra of GCr15 steel gradually decrease as pH increases. Compared with acidic pH of 4.0, at alkaline pH of 10.0, the surface film of GCr15 steel has much higher corrosion resistance and wear resistance, and thus the material removal caused by the pure corrosion and corrosion-enhanced wear are greatly inhibited, resulting in much lower MRR and Ra. Moreover, it is confirmed that a more protective composite film, consisting of more Fe3+ hydroxides/oxyhydroxides and complex compounds with −NH2 functional groups of ethylenediamine, can be formed at pH of 10.0. Additionally, the polishing performance of pure iron and a medium carbon 45 steel exhibits a similar trend as GCr15 steel. The findings suggest that acidic pH could be feasible for amine groups-based complexing agents to achieve efficient CMP of iron-based metals.

Development of a Copper Chemical Mechanical Polishing Slurry at Neutral pH Based on Ceria Slurry

2010 ◽  
Vol 157 (10) ◽  
pp. H952 ◽  
Author(s):  
Yung Jun Kim ◽  
Oh Joong Kwon ◽  
Min Cheol Kang ◽  
Myung-Won Suh ◽  
Young Im ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Neutral Ph

scholarly journals Kinematic Prediction and Experimental Demonstration of Conditioning Process for Controlling the Profile Shape of a Chemical Mechanical Polishing Pad

2021 ◽  
Vol 11 (10) ◽  
pp. 4358
Author(s):  
Hanchul Cho ◽  
Taekyung Lee ◽  
Doyeon Kim ◽  
Hyoungjae Kim
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Shape Error ◽  
Profile Shape ◽  
Conditioning Process ◽  
Polishing Pad ◽  
Simulation Based ◽  
Diamond Conditioner ◽  
Pad Conditioning ◽  
Good Agreement

The uniformity of the wafer in a chemical mechanical polishing (CMP) process is vital to the ultra-fine and high integration of semiconductor structures. In particular, the uniformity of the polishing pad corresponding to the tool directly affects the polishing uniformity and wafer shape. In this study, the profile shape of a CMP pad was predicted through a kinematic simulation based on the trajectory density of the diamond abrasives of the diamond conditioner disc. The kinematic prediction was found to be in good agreement with the experimentally measured pad profile shape. Based on this, the shape error of the pad could be maintained within 10 μm even after performing the pad conditioning process for more than 2 h, through the overhang of the conditioner.

Sign in / Sign up

Export Citation Format

Share Document