Chemical Mechanical Polishing of Cu Pattern Wafer Based Alkaline Slurry in GLSI with R(NH2)n as Complexing Agent

2011 ◽  
Vol 236-238 ◽  
pp. 3020-3023 ◽  
Author(s):  
Yan Gang He ◽  
Xiao Wei Gan ◽  
Wei Hong ◽  
Yi Hu ◽  
Yu Ling Liu
Keyword(s):  
Reaction Mechanism ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Complexing Agents ◽  
Complexing Agent ◽  
Mechanism Analysis ◽  
Slurry Stability ◽  
Cu Cmp ◽  
Better Than

Chemical mechanical polishing (CMP) of Cu pattern wafer based alkaline slurry in GLSI with R(NH2)n as complexing agent was investigated. In Cu CMP procedure, it is necessary to minimize the surface dishing and erosion while maintaining good planarity. This requirements are met through the complexing agents. Based on the reaction mechanism analysis of Cu in alkaline slurry with R(NH2)n as complexing agent in CMP, the performance of Cu dishing and erosion were discussed. The results showed that the slurry stability can be improved obviously by the addition of R(NH2)n as complexing agent, both Cu1 and Cu2 have good dishing and erosion performance. Furthermore, the dishing condition of Cu2 (180-230nm) is better than that of Cu1 (280-370nm), and the erosion condition of Cu2 (230-260nm) is also better than that of Cu1 (450-500nm).

scholarly journals Exploring the role of −NH2 functional groups of ethylenediamine in chemical mechanical polishing of GCr15 bearing steel

Friction ◽  
2020 ◽  
Author(s):  
Hanqiang Wu ◽  
Liang Jiang ◽  
Xia Zhong ◽  
Jinwei Liu ◽  
Na Qin ◽  
...  
Keyword(s):  
Functional Groups ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Bearing Steel ◽  
Mechanical Polishing ◽  
Complexing Agents ◽  
Complexing Agent ◽  
Acidic Ph ◽  
Gcr15 Steel ◽  
Gcr15 Bearing Steel

AbstractEthylenediamine with two −NH2 functional groups was used as a critical complexing agent in chemical mechanical polishing (CMP) slurries for a high carbon chromium GCr15 bearing steel (equivalent to AISI 52100). The polishing performance and corresponding mechanism of −NH2 functional groups were thoroughly investigated as a function of pH. It is revealed that, when polished with ethylenediamine and H2O2-based slurries, the material removal rate (MRR) and surface roughness Ra of GCr15 steel gradually decrease as pH increases. Compared with acidic pH of 4.0, at alkaline pH of 10.0, the surface film of GCr15 steel has much higher corrosion resistance and wear resistance, and thus the material removal caused by the pure corrosion and corrosion-enhanced wear are greatly inhibited, resulting in much lower MRR and Ra. Moreover, it is confirmed that a more protective composite film, consisting of more Fe3+ hydroxides/oxyhydroxides and complex compounds with −NH2 functional groups of ethylenediamine, can be formed at pH of 10.0. Additionally, the polishing performance of pure iron and a medium carbon 45 steel exhibits a similar trend as GCr15 steel. The findings suggest that acidic pH could be feasible for amine groups-based complexing agents to achieve efficient CMP of iron-based metals.

Research on Effects of Slurry Additives in Cu CMP for ULSI Manufacturing

2006 ◽  
Vol 304-305 ◽  
pp. 350-354 ◽  
Author(s):  
X.J. Li ◽  
Dong Ming Guo ◽  
R.K. Ren ◽  
Zhu Ji Jin
Keyword(s):  
Hydrogen Peroxide ◽  
Surface Roughness ◽  
Electrochemical Impedance Spectroscopy ◽  
Citric Acid ◽  
Chemical Mechanical Polishing ◽  
Electrochemical Impedance ◽  
Etching Rate ◽  
Complexing Agent ◽  
Cu Cmp ◽  
Static Etching

In this paper, in order to analyze the oxidation, dissolution and corrosive inhibition effects of additives in the slurry for copper Chemical-mechanical polishing(CMP), the slurry(pH5) with the peroxide as an oxidant, the citric acid as a complexing agent and the benzotriazole(BTA) as an inhibitor is studied. The static etching rate and polishing rate of the Cu-H2O2-Citric acid-BTA slurry are measured. The electrochemical behavior involved in the dissolution and corrosive inhibition of copper in the solutions containing additives is investigated by the electrochemical impedance spectroscopy (EIS) studies. The surface roughness is measured using ZYGO 3-D surface profiler. It is observed that when the slurry is with only 5wt% peroxide existing, copper is stable and slight etching rate on the copper is produced, and the etching rate is only 8.7nm/min. When 0.6wt% citric acid presents after adding 5wt% hydrogen peroxide, the etching rate will increase by 5.3 times, with a blue complexing product emerging. When the inhibitor BTA is added, the corrosion will be effectively restrained. From the EIS results, the impedance of copper in 5wt% peroxide solution which is in passivation can be greatly decreased by adding the citric acid as a complexing reagent. And the impedance of copper in the solution containing peroxide and citric acid can be increased by the addition of BTA. The surface roughness of the wafer polished with the slurry of 5wt% peroxide+0.6wt% citric acid+0.12wt% BTA slurry is Ra 4.7 Å.

Environment-Friendly Chemical Mechanical Polishing Slurry for SiC Wafer

2016 ◽  
Vol 874 ◽  
pp. 415-419
Author(s):  
Ze Wei Yuan ◽  
Yan He ◽  
Quan Wen ◽  
Hai Yang Du
Keyword(s):  
Surface Roughness ◽  
Reaction Mechanism ◽  
Environmental Pollution ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Polishing Process ◽  
Environment Friendly ◽  
High Efficient ◽  
Sic Wafer

In order to avoid the environmental pollution and the harm to body of traditional polishing slurries, an environment-friendly chemical mechanical polishing technology is proposed for SiC wafer in this study. With this method, SiC material is removed by utilizing the strong oxidability of nanotitanium dioxide particles in chemical mechanical slurry in the existence of ultraviolet. While, the oxidbillity will recede in absence of ultraviolet when the polishing process finishes. On the basis of investigating in the reaction mechanism between SiC and nanotitanium dioxide, the slurries are prepared for the environment-friendly chemical mechanical polishing technology. The results show that the ultraviolet-assisted CMP slurry has strong oxidation for SiC material. This method is high-efficient for polishing SiC wafer. The surface roughness is reduced to about Ra 0.1μm from Ra 0.818μm after polishing for one hour.

Gallic Acid as a Complexing Agent for Copper Chemical Mechanical Polishing Slurries at Neutral pH

2011 ◽  
Vol 50 (5) ◽  
pp. 056501 ◽  
Author(s):  
Yung Jun Kim ◽  
Min Cheol Kang ◽  
Oh Joong Kwon ◽  
Jae Jeong Kim
Keyword(s):  
Gallic Acid ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Complexing Agent ◽  
Neutral Ph
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