Transparent Conductive Distributed Bragg Reflectors Composed of High and Low Refractive Index Transparent Conductive Films

2012 ◽  
Vol 51 ◽  
pp. 052602
Author(s):  
Cheng-Chung Lee ◽  
Meng-Chi Li ◽  
Sheng-Hui Chen ◽  
Chien-Cheng Kuo
Keyword(s):  
Refractive Index ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
Transparent Conductive Films ◽  
Conductive Films ◽  
Low Refractive Index

Effect of In as Surfactant on the Growth of AlN/GaN Distributed Bragg Reflectors by Metal Organic Vapor Phase Epitaxy

2008 ◽  
Vol 1108 ◽  
Author(s):  
L E Rodak ◽  
D Korakakis
Keyword(s):  
Refractive Index ◽  
Vapor Phase ◽  
Lattice Mismatch ◽  
Vapor Phase Epitaxy ◽  
Cavity Surface ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
Organic Vapor ◽  
High Reflectivity ◽  
Metal Organic

AbstractNitride based Distributed Bragg Reflectors (DBRs) have several important applications in current nitride based optoelectronic devices. DBRs can be implemented in resonant cavity light emitting diodes (RCLEDs) to improve light extraction and obtain a more directional emission and in vertical cavity surface emitting lasers (VCSELs) to achieve a lower threshold current. Due the large contrast in refractive index, AlN/GaN DRBs are practical for obtaining high reflectivity and wide bandwidth using relatively few periods. Cracking of the samples is typical for AlN/GaN DRBs due to the tensile strain which results from the 2.4% lattice mismatch and to the difference in thermal expansion coefficients. In addition to cracks, v-shaped defects may also arise in the surface due to surface undulation from stored elastic misfit strain or from threading dislocations that result in scattering and diffraction. Several techniques to reduce the number of cracks and defects have been investigated to obtain smooth surface morphology and high reflectivity, e.g. superlattices to reduce the strain or the growth of AlInGaN/GaN DBRs that offer less lattice mismatch but also lower refractive index contrast. In this work, results of the use of Indium (In) as a surfactant in Metal Organic Vapor Phase Epitaxy (MOVPE) will be discussed. This study addresses AlN/GaN DBR structures designed for peak reflectivity around 465 nm. During the AlN layers’ growth, trimethylindium was introduced to the system and resulted in a reduction of surface cracks. Results of growths at In flow rates are reported and discussed.

scholarly journals Solution processed high refractive index contrast distributed Bragg reflectors

2016 ◽  
Vol 4 (20) ◽  
pp. 4532-4537 ◽  
Author(s):  
Miguel Anaya ◽  
Andrea Rubino ◽  
Mauricio E. Calvo ◽  
Hernán Míguez
Keyword(s):  
Refractive Index ◽  
Spectral Range ◽  
High Refractive Index ◽  
Dielectric Films ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
Solution Processed ◽  
Refractive Index Contrast ◽  
Number Of Layers ◽  
Index Contrast

We have developed a method to alternate porous and dense dielectric films in order to build high refractive index contrast distributed Bragg reflectors (DBRs) capable of reflecting very efficiently in a targeted spectral range employing a small number of layers in the stack.

AlN/GaN Distributed Bragg Reflectors Grown via Metal Organic Vapor Phase Epitaxy using GaN Insertion Layers

2012 ◽  
Vol 1396 ◽  
Author(s):  
L. E. Rodak ◽  
J. Peacock ◽  
J. Justice ◽  
D. Korakakis
Keyword(s):  
Refractive Index ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Material System ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
Organic Vapor ◽  
High Reflectivity ◽  
Short Period ◽  
Metal Organic

ABSTRACTDistributed Bragg Reflectors (DBRs) are an important component of various optoelectronic devices for ultra violet and visible wavelengths. In the III-Nitride material system, Aluminum Nitride (AlN) and Gallium Nitride (GaN) offer a large contrast in refractive index and are therefore well suited for fabricating DBRs with high reflectivity and wide bandwidths using relatively few periods. However, the large lattice and thermal mismatch leads to cracking in these heterostructures. In this work short period superlattice layers have been used to fabricate high reflectivity (> 94%) nitride based DBRs via Metal Organic Vapor Phase Epitaxy. Short period AlN/GaN superlattices containing three to four monolayers of GaN have been employed as the low refractive index layer in DBRs to minimize cracking. Using this technique, crack-free DBRs reflecting from 440-475 nm with up to 25 periods have been fabricated. The technique has been proven to be versatile and resulted in large area yield DBRs grown on a variety of different sapphire substrates.

Characteristics of Laminating Transparent Conductive Films Aimed at Nursing Indium Ingredient

2009 ◽  
Vol 129 (11) ◽  
pp. 1978-1980
Author(s):  
Kimihiro Ikuta ◽  
Takanori Aoki ◽  
Akio Suzuki ◽  
Tatsuhiko Matsushita ◽  
Masahiro Okuda
Keyword(s):  
Transparent Conductive Films ◽  
Conductive Films

Xylene-Cellulose Caprate as a Histologic Mounting Medium of Low Refractive Index

1955 ◽  
Vol 30 (3) ◽  
pp. 133-134 ◽  
Author(s):  
R. D. Lillie ◽  
J. P. Greco Henson
Keyword(s):  
Refractive Index ◽  
Low Refractive Index
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