Contrast Behavior of the Laue-Case Kikuchi Pattern in Reflection Electron Diffraction

1977 ◽  
Vol 43 (4) ◽  
pp. 1461-1462
Author(s):  
Masakazu Ichikawa ◽  
Kazunobu Hayakawa
Keyword(s):  
Electron Diffraction ◽  
Kikuchi Pattern ◽  
Reflection Electron Diffraction

Dissociated Σ=27 boundaries in silicon

1988 ◽  
Vol 46 ◽  
pp. 624-625
Author(s):  
A. Garg ◽  
W.A.T. Clark ◽  
J.P. Hirth
Keyword(s):  
Electron Diffraction ◽  
Local Minimum ◽  
Boundary Energy ◽  
Coincidence Site Lattice ◽  
Boundary Plane ◽  
Low Energy ◽  
Theoretical Understanding ◽  
Site Lattice ◽  
Kikuchi Pattern ◽  
Analysis Techniques

In the last twenty years, a significant amount of work has been done in the theoretical understanding of grain boundaries. The various proposed grain boundary models suggest the existence of coincidence site lattice (CSL) boundaries at specific misorientations where a periodic structure representing a local minimum of energy exists between the two crystals. In general, the boundary energy depends not only upon the density of CSL sites but also upon the boundary plane, so that different facets of the same boundary have different energy. Here we describe TEM observations of the dissociation of a Σ=27 boundary in silicon in order to reduce its surface energy and attain a low energy configuration.The boundary was identified as near CSL Σ=27 {255} having a misorientation of (38.7±0.2)°/[011] by standard Kikuchi pattern, electron diffraction and trace analysis techniques. Although the boundary appeared planar, in the TEM it was found to be dissociated in some regions into a Σ=3 {111} and a Σ=9 {122} boundary, as shown in Fig. 1.

Calculation of Reflected Intensities for Medium and High Energy Electron Diffraction

1972 ◽  
Vol 27 (3) ◽  
pp. 390-395 ◽  
Author(s):  
A.R. Moon
Keyword(s):  
Electron Diffraction ◽  
Surface Structure ◽  
Incident Angle ◽  
High Energy ◽  
Numerical Calculations ◽  
High Energy Electron ◽  
Matrix Eigenvalue ◽  
High Energy Electrons ◽  
Experimental Values ◽  
Reflection Electron Diffraction

Abstract The Bethe theory of electron diffraction is used to calculate reflection electron diffraction intensities for medium and high energy electrons. A generalized Hill's determinant method is used for the numerical calculations instead of the more common but slower matrix-eigenvalue technique. Results of a "systematics" calculation of the specular intensity as a function of incident angle are compared with some experimental values for the Si (111) surface. The application of the Bethe theory to crystals where the surface structure differs from the bulk is also considered.

Reflection Electron Diffraction of Gold-Diffused Silicon

1972 ◽  
Vol 11 (6) ◽  
pp. 917-918 ◽  
Author(s):  
Masayuki Yoshida ◽  
Shoichi Hirota
Keyword(s):  
Electron Diffraction ◽  
Reflection Electron Diffraction

Non-Planar Solid Phase Epitaxial Growth Processes in Ion-Implanted GaAs

1981 ◽  
Vol 10 ◽  
Author(s):  
J. S. Williams ◽  
F. M. Adams ◽  
K. G. Rossiter
Keyword(s):  
High Resolution ◽  
Electron Diffraction ◽  
Epitaxial Growth ◽  
Solid Phase ◽  
Surface Crystallization ◽  
Growth Interface ◽  
Near Surface ◽  
Epitaxial Regrowth ◽  
Reflection Electron Diffraction ◽  
Ion Implanted

High resolution ion channelling and reflection electron diffraction techniques have been used to examine details of epitaxial regrowth in Ar+-ion-implanted GaAs(100) at furnace anneal temperatures of 400°C or less. In particular, we have investigated the nature and extent of epitaxial regrowth during both isothermal and isochronal annealing for various implant energies and for implant doses above and below the amorphous threshold. Our results indicate the development of a nonplanar growth interface during annealing which may lead, ultimately, to complex near-surface crystallization processes. Consistently with our observations and recent results from other laboratories, we propose a model for the epitaxial regrowth of amorphous GaAs layers based upon non-uniform growth rates along the amorphous-crystalline interface which could arise from local stoichiometry imbalance.

Implications for Ultrafast Reflection Electron Diffraction from Temporal and Spatial Evolution of Transient Electric Fields

2009 ◽  
Vol 1230 ◽  
Author(s):  
Hyuk Park ◽  
J.M. Zuo
Keyword(s):  
Electron Diffraction ◽  
Electric Fields ◽  
Materials Science ◽  
Thermionic Emission ◽  
Sample Surface ◽  
High Energy ◽  
Intense Laser ◽  
Hot Electron ◽  
Time Resolved ◽  
Reflection Electron Diffraction

AbstractUnderstanding interaction of ultrafast pulsed laser with matter is critical for probing ultrafast processes in materials science, understanding the physics of laser ablation and the laser induced non-equilibrium carrier dynamics in metals and semiconductors, including plasmonics. When an intense laser pulse of femtoseconds (fs) in duration hits the surface of a targeted matter, it excites a hot electron gas. Part of the hot electrons is emitted from the surface in a way similar to thermionic emission. Electrons can also be emitted through multiphoton photoemission (MPPE) or thermally assisted MPPE. The emitted electrons travel at speeds that create transient electric fields (TEFs). To detect TEFs and study the dynamics of emitted electrons, we have developed a time resolved electron beam imaging technique that allows us to measure TEFs above a sample surface at picoseconds time resolution. We have also developed a model of the TEFs based on the propagation of emitted electrons and the percentage of electrons escaping from the surface. We examine the significance of TEFs for ultrafast reflection electron diffraction by examining anomalous effects in ultrafast reflection high energy electron diffraction (RHEED) of silicon surfaces.

Reduction of Contamination in Reflection Electron Diffraction

1962 ◽  
Vol 33 (4) ◽  
pp. 1419-1422 ◽  
Author(s):  
Eiji Yoda ◽  
Benjamin M. Siegel
Keyword(s):  
Electron Diffraction ◽  
Reflection Electron Diffraction
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