Improved Light Output Power of Ultraviolet GaN-Based Light-Emitting Diode by Using AgPdCu Reflector

2019 ◽  
Vol 89 (5) ◽  
pp. 27-33
Author(s):  
Kee-Baek Sim ◽  
Su-Jung Yoon ◽  
Tae-Yeon Seong
Keyword(s):  
Output Power ◽  
Light Emitting Diode ◽  
Light Output ◽  
Light Output Power ◽  
Light Emitting

Improved light output power of GaN-based ultraviolet light-emitting diode using a mesh-type GaN/SiO2 /Al omnidirectional reflector

2017 ◽  
Vol 214 (8) ◽  
pp. 1600789
Author(s):  
Jun-Youn Won ◽  
Dae-Hyun Kim ◽  
Daesung Kang ◽  
Jun-Suk Sung ◽  
Da-Som Kim ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Output Power ◽  
Light Emitting Diode ◽  
Light Output ◽  
Light Output Power ◽  
Light Emitting

scholarly journals Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO_2

2010 ◽  
Vol 18 (2) ◽  
pp. 1462 ◽  
Author(s):  
Chu-Young Cho ◽  
Jin-Bock Lee ◽  
Sang-Jun Lee ◽  
Sang-Heon Han ◽  
Tae-Young Park ◽  
...  
Keyword(s):  
Output Power ◽  
Light Emitting Diode ◽  
Light Output ◽  
Light Output Power ◽  
Light Emitting ◽  
Lateral Epitaxial Overgrowth

Hybrid indium tin oxide/Ag nanowire electrodes for improving the light output power of near ultraviolet AlGaN-based light-emitting diode

2016 ◽  
Vol 16 (5) ◽  
pp. 545-548 ◽  
Author(s):  
Jae-Seong Park ◽  
Jae-Ho Kim ◽  
Jun-Yong Kim ◽  
Dae-Hyun Kim ◽  
Daesung Kang ◽  
...  
Keyword(s):  
Output Power ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Light Emitting Diode ◽  
Light Output ◽  
Light Output Power ◽  
Light Emitting ◽  
Near Ultraviolet ◽  
Ag Nanowire

Improved Light Output Power of GaN-Based Light-Emitting Diodes Using Double Photonic Quasi-Crystal Patterns

2009 ◽  
Vol 30 (11) ◽  
pp. 1152-1154 ◽  
Author(s):  
Hung-Wen Huang ◽  
Chung-Hsiang Lin ◽  
Zhi-Kai Huang ◽  
Kang-Yuan Lee ◽  
Chang-Chin Yu ◽  
...  
Keyword(s):  
Output Power ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Light Output Power ◽  
Light Emitting

scholarly journals A 3 W High-Voltage Single-Chip Green Light-Emitting Diode with Multiple-Cells Network

2015 ◽  
Vol 2015 ◽  
pp. 1-4 ◽  
Author(s):  
W. Wang ◽  
Y. Cai ◽  
Y. B. Zhang ◽  
H. J. Huang ◽  
W. Huang ◽  
...  
Keyword(s):  
High Voltage ◽  
Light Emitting Diode ◽  
Light Output ◽  
Green Light ◽  
Current Crowding ◽  
Single Chip ◽  
Light Output Power ◽  
Large Area ◽  
Light Emitting ◽  
Multiple Cells

A parallel and series network structure was introduced into the design of the high-voltage single-chip (HV-SC) light-emitting diode to inhibit the effect of current crowding and to improve the yield. Using such a design, a6.6×5 mm2large area LED chip of 24 parallel stages was demonstrated with 3 W light output power (LOP) at the current of 500 mA. The forward voltage was measured to be 83 V with the same current injection, corresponding to 3.5 V for a single stage. The LED chip’s average thermal resistance was identified to be 0.28 K/W by using infrared thermography analysis.

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