scholarly journals A 3 W High-Voltage Single-Chip Green Light-Emitting Diode with Multiple-Cells Network

2015 ◽  
Vol 2015 ◽  
pp. 1-4 ◽  
Author(s):  
W. Wang ◽  
Y. Cai ◽  
Y. B. Zhang ◽  
H. J. Huang ◽  
W. Huang ◽  
...  
Keyword(s):  
High Voltage ◽  
Light Emitting Diode ◽  
Light Output ◽  
Green Light ◽  
Current Crowding ◽  
Single Chip ◽  
Light Output Power ◽  
Large Area ◽  
Light Emitting ◽  
Multiple Cells

A parallel and series network structure was introduced into the design of the high-voltage single-chip (HV-SC) light-emitting diode to inhibit the effect of current crowding and to improve the yield. Using such a design, a6.6×5 mm2large area LED chip of 24 parallel stages was demonstrated with 3 W light output power (LOP) at the current of 500 mA. The forward voltage was measured to be 83 V with the same current injection, corresponding to 3.5 V for a single stage. The LED chip’s average thermal resistance was identified to be 0.28 K/W by using infrared thermography analysis.

Improved light output power of GaN-based ultraviolet light-emitting diode using a mesh-type GaN/SiO2 /Al omnidirectional reflector

2017 ◽  
Vol 214 (8) ◽  
pp. 1600789
Author(s):  
Jun-Youn Won ◽  
Dae-Hyun Kim ◽  
Daesung Kang ◽  
Jun-Suk Sung ◽  
Da-Som Kim ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Output Power ◽  
Light Emitting Diode ◽  
Light Output ◽  
Light Output Power ◽  
Light Emitting

scholarly journals Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO_2

2010 ◽  
Vol 18 (2) ◽  
pp. 1462 ◽  
Author(s):  
Chu-Young Cho ◽  
Jin-Bock Lee ◽  
Sang-Jun Lee ◽  
Sang-Heon Han ◽  
Tae-Young Park ◽  
...  
Keyword(s):  
Output Power ◽  
Light Emitting Diode ◽  
Light Output ◽  
Light Output Power ◽  
Light Emitting ◽  
Lateral Epitaxial Overgrowth

Hybrid indium tin oxide/Ag nanowire electrodes for improving the light output power of near ultraviolet AlGaN-based light-emitting diode

2016 ◽  
Vol 16 (5) ◽  
pp. 545-548 ◽  
Author(s):  
Jae-Seong Park ◽  
Jae-Ho Kim ◽  
Jun-Yong Kim ◽  
Dae-Hyun Kim ◽  
Daesung Kang ◽  
...  
Keyword(s):  
Output Power ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Light Emitting Diode ◽  
Light Output ◽  
Light Output Power ◽  
Light Emitting ◽  
Near Ultraviolet ◽  
Ag Nanowire

scholarly journals Enhanced light output power of thin film GaN-based high voltage light-emitting diodes

2014 ◽  
Vol 22 (S6) ◽  
pp. A1462 ◽  
Author(s):  
Ching-Ho Tien ◽  
Ken-Yen Chen ◽  
Chen-Peng Hsu ◽  
Ray-Hua Horng
Keyword(s):  
Thin Film ◽  
Output Power ◽  
High Voltage ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Light Output Power ◽  
Light Emitting

Determination of current-crowding effects on loss of light-output power in InGaN/GaN blue-light-emitting diodes

2015 ◽  
Vol 67 (2) ◽  
pp. 346-349 ◽  
Author(s):  
Hye-Jung Yu ◽  
Yanqun Dong ◽  
Tae-Soo Kim ◽  
Jin-Gyu Lee ◽  
Nan-Cho Oh ◽  
...  
Keyword(s):  
Output Power ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Current Crowding ◽  
Light Output Power ◽  
Light Emitting ◽  
Crowding Effects

scholarly journals Enhanced Device Performance of GaInN-Based Green Light-Emitting Diode with Sputtered AlN Buffer Layer

2019 ◽  
Vol 9 (4) ◽  
pp. 788 ◽  
Author(s):  
Seiji Ishimoto ◽  
Dong-Pyo Han ◽  
Kengo Yamamoto ◽  
Ryoya Mano ◽  
Satoshi Kamiyama ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Buffer Layer ◽  
Light Emitting Diode ◽  
Light Output ◽  
Green Light ◽  
Device Performance ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Current Characteristics ◽  
Aln Buffer

In this study, we compared the device performance of GaInN-based green LEDs grown on c-plane sapphire substrates with a conventional low temperature GaN buffer layer to those with a sputtered-AlN buffer layer. The light output power and leakage current characteristics were significantly improved by just replacing the buffer layer with a sputtered-AlN layer. To understand the origin of the improvement in performance, the electrical and optical properties were compared by means of electro-reflectance spectroscopy, I–V curves, electroluminescence spectra, L–I curves, and internal quantum efficiencies. From the analysis of the results, we concluded that the improvement is mainly due to the mitigation of strain and reduction of the piezoelectric field in the multiple quantum wells active region.

Electrical and Optical Properties of a High-Voltage Large Area Blue Light-Emitting Diode

2013 ◽  
Vol 52 (8S) ◽  
pp. 08JG08 ◽  
Author(s):  
Wang Wang ◽  
Wei Wei ◽  
Cai Cai ◽  
Yong Yong ◽  
Huang Huang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Blue Light ◽  
High Voltage ◽  
Light Emitting Diode ◽  
Large Area ◽  
Electrical And Optical Properties ◽  
Light Emitting
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