CVD of Nanosized ZnS and CdS Thin Films from Single-Source Precursors

AbstractSeveral single-source precursors including In(SOCNiBu2)3, In(S2CNMeHex)3 and Ga(S2CNMeR)3, (R = Et, Bu, Hex) have been prepared and used for the deposition of Group 13 metal sulfide thin films. The α and β-In2S3thin films on borosilicate glass and oc-Ga 2S3thin films on GaAs(111) single crystal substrates were prepared from the precursors by various chemical vapour deposition (CVD) techniques. These semicondcuting materials have been characterized by XRD, SEM, XPS and EDAX.

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Combining single source chemical vapour deposition precursors to explore the phase space of titanium oxynitride thin films

Dalton Transactions ◽

10.1039/c7dt04694d ◽

2018 ◽

Vol 47 (31) ◽

pp. 10536-10543 ◽

Cited By ~ 1

Author(s):

Kelly Rees ◽

Emanuela Lorusso ◽

Samuel D. Cosham ◽

Alexander N. Kulak ◽

Geoffrey Hyett

Keyword(s):

Thin Films ◽

Phase Space ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Single Source ◽

Single Source Precursors

Combining single-source precursors in aerosol assisted CVD allows control of the composition of mixed anion titanium oxynitride thin films.

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ChemInform Abstract: Indium tert-Butylthiolates as Single Source Precursors for Indium Sulfide Thin Films: Is Molecular Design Enough?

ChemInform ◽

10.1002/chin.199332023 ◽

2010 ◽

Vol 24 (32) ◽

pp. no-no

Author(s):

A. N. MACINNES ◽

M. B. POWER ◽

A. F. HEPP ◽

A. R. BARRON

Keyword(s):

Thin Films ◽

Molecular Design ◽

Indium Sulfide ◽

Single Source ◽

Single Source Precursors

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Summary Abstract: Undoped low resistivity CdS thin films deposited on low temperature (∠200 °C) substrates by single source evaporation

Journal of Vacuum Science and Technology ◽

10.1116/1.571288 ◽

1982 ◽

Vol 20 (3) ◽

pp. 306-307 ◽

Cited By ~ 12

Author(s):

R. R. Arya ◽

R. Beaulieu ◽

M. Kwietniak ◽

J. Loferski ◽

L. Kazmerski

Keyword(s):

Thin Films ◽

Low Temperature ◽

Single Source ◽

Low Resistivity ◽

Cds Thin Films

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Synthesis and properties of MoCl4complexes with thio- and seleno-ethers and their use for chemical vapour deposition of MoSe2and MoS2films

Dalton Transactions ◽

10.1039/c7dt04352j ◽

2018 ◽

Vol 47 (7) ◽

pp. 2406-2414 ◽

Cited By ~ 4

Author(s):

Yao-Pang Chang ◽

Andrew L. Hector ◽

William Levason ◽

Gillian Reid ◽

Joshua Whittam

Keyword(s):

Thin Films ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Single Source ◽

Chloride Complexes ◽

Single Source Precursors

A new series of Mo(iv) chloride complexes with thioether and seleneoether ligands is reported; [MoCl4(nBu2E)2] (E = S, Se) function as single source precursors for the CVD of MoE2thin films.

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