The Chemical Polishing of Single Crystal a -Alumina Using Silicon

1966 ◽  
Vol 113 (10) ◽  
pp. 1085 ◽  
Author(s):  
J. D. Filby
Keyword(s):  
Single Crystal ◽  
Chemical Polishing

Chemical Polishing of CdS Single Crystal

1967 ◽  
Vol 6 (5) ◽  
pp. 652-652 ◽  
Author(s):  
Masao Maeda ◽  
Masanobu Doken ◽  
Hiroshi Fukui
Keyword(s):  
Single Crystal ◽  
Chemical Polishing

Chemical Polishing of Single-Crystal PbTe and Pb1 –xSnxTe Wafers

2020 ◽  
Vol 56 (8) ◽  
pp. 785-790
Author(s):  
G. P. Malanych ◽  
V. N. Tomashyk ◽  
A. A. Korchovyi
Keyword(s):  
Single Crystal ◽  
Chemical Polishing

scholarly journals Chemical Polishing and Formation of Etch Pits on Antimony Single-Crystal

1973 ◽  
Vol 24 (2) ◽  
pp. 91-93
Author(s):  
Eiichi SATO ◽  
Toshiyasu TAMURA ◽  
Taijiro OKABE
Keyword(s):  
Single Crystal ◽  
Chemical Polishing ◽  
Etch Pits

Structure of Silver (100) and (111) Single‐Crystal Surfaces Obtained by Chemical Polishing

1984 ◽  
Vol 131 (7) ◽  
pp. 1730-1731 ◽  
Author(s):  
Radoslav R. Adzic ◽  
Michael E. Hanson ◽  
Ernest B. Yeager
Keyword(s):  
Single Crystal ◽  
Chemical Polishing ◽  
Crystal Surfaces ◽  
Single Crystal Surfaces

Arsenic segregation in polysilicon

1983 ◽  
Vol 41 ◽  
pp. 154-155 ◽  
Author(s):  
P.E. Batson ◽  
C.R.M. Grovenor ◽  
D.A. Smith ◽  
C. Wong
Keyword(s):  
Incident Beam ◽  
Silicon Wafers ◽  
Chemical Polishing ◽  
Bright Field Image ◽  
Beam Size ◽  
Stem Analysis ◽  
Bright Field ◽  
Twin Boundaries ◽  
X Ray ◽  
Line Scan

In this work As doped polysilicon was deposited onto (100) silicon wafers by APCVD at 660°C from a silane-arsine mixture, followed by a ten minute anneal at 1000°C, and in one case a further ten minute anneal at 700°C. Specimens for TEM and STEM analysis were prepared by chemical polishing. The microstructure, which is unchanged by the final 700°C anneal,is shown in Figure 1. It consists of numerous randomly oriented grains many of which contain twins.X-ray analysis was carried out in a VG HB5 STEM. As K α x-ray counts were collected from STEM scans across grain and twin boundaries, Figures 2-4. The incident beam size was about 1.5nm in diameter, and each of the 20 channels in the plots was sampled from a 1.6nm length of the approximately 30nm line scan across the boundary. The bright field image profile along the scanned line was monitored during the analysis to allow correlation between the image and the x-ray signal.

A Preparation of High Resolution Standards for Electron Microscopy. Part II

1971 ◽  
Vol 29 ◽  
pp. 160-161
Author(s):  
Akira Tanaka ◽  
David F. Harling
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Carbon Black ◽  
Single Crystal ◽  
Dark Field ◽  
Graphitized Carbon Black ◽  
Graphitized Carbon ◽  
Dark Field Imaging ◽  
Crystal Films ◽  
Micro Holes

In the previous paper, the author reported on a technique for preparing vapor-deposited single crystal films as high resolution standards for electron microscopy. The present paper is intended to describe the preparation of several high resolution standards for dark field microscopy and also to mention some results obtained from these studies. Three preparations were used initially: 1.) Graphitized carbon black, 2.) Epitaxially grown particles of different metals prepared by vapor deposition, and 3.) Particles grown epitaxially on the edge of micro-holes formed in a gold single crystal film.The authors successfully obtained dark field micrographs demonstrating the 3.4Å lattice spacing of graphitized carbon black and the Au single crystal (111) lattice of 2.35Å. The latter spacing is especially suitable for dark field imaging because of its preparation, as in 3.), above. After the deposited film of Au (001) orientation is prepared at 400°C the substrate temperature is raised, resulting in the formation of many square micro-holes caused by partial evaporation of the Au film.

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